IQDH35N03LM5CGATMA1 vs BSZ065N03LSATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IQDH35N03LM5CGATMA1 sa pamamagitan ng Infineon at BSZ065N03LSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQDH35N03LM5CGATMA1 - 30V 700A 0.35mΩ N-Channel MOSFET | Infineon
IQDH35N03LM5CGATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IQDH35N03LM5CGATMA1 | BSZ065N03LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta | 66 A | — |
| Pulsed Drain Current (IDM) at Tc | 700 A | — |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-to-Source On-Resistance (RDS(on)) | 0.35 mΩ (typical at VGS=10 V) | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 278 W | — |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C | -55C to +150C (junction) |
| Packhaging | PG-TTFN-9-U02 (PQFN 5x6 mm²) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 | 1 |
| Tindminan RoHS | Compliant | Compliant |
| Wala sa Halogen | Yes | — |
| Channel Type | N-Channel | — |
| Technology | OptiMOS 5 trench MOSFET | Trench MOSFET (OptiMOS) |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 30V |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 12 A |
| Continuous Drain Current (ID) at TC=25C | — | 40 A |
| Power Dissipation (PD) at TA=25C | — | 2.1 W |
| Power Dissipation (PD) at TC=25C | — | 26 W |
| Packhaging / Kaso | — | PG-TSDSON-8-FL (S308) |
| Configuration | — | Single N-Channel |
| Gate Drive (typical) | — | 4.5 V |