IQDH88N06LM5ATMA1 vs IPB60R040CFD7ATMA1 比較

詳細並排比較 IQDH88N06LM5ATMA1 由 Infineon 與 IPB60R040CFD7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IQDH88N06LM5ATMA1 IQDH88N06LM5ATMA1 - 60V 447A 0.86mOhm N-FET | Infineon OptiMOS 5

IQDH88N06LM5ATMA1 - 60V 447A 0.86mOhm N-FET | Infineon OptiMOS 5

IQDH88N06LM5ATMA1 ✓ 啟用中
Infineon
IPB60R040CFD7ATMA1 IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 ✓ 啟用中

規格比較

參數 IQDH88N06LM5ATMA1 IPB60R040CFD7ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
庫存狀態 — In Stock
單價 (USD) — $5.19
FET Type N-Channel —
Technology OptiMOS 5 (trench) Superjunction (SJ) N-Channel MOSFET
Drain-to-Source Voltage (VDS) 60 V —
Gate-to-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Drain Current (ID) Continuous at Ta 42 A —
Drain Current (ID) Continuous at Tc 447 A —
RDS(on) Max at VGS=10V 0.86 mOhm —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 333 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
封裝 PG-TSON-8-9 (PQFN 5x6) PG-TO263-3-2 (D2PAK)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 [DATA_NEEDED: TJ max] -55°C to +150°C
RoHS 狀態 Compliant Compliant
MSL 等級 [DATA_NEEDED: MSL rating] 1
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
Product Family — CoolMOS CFD7
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID, Tc=25°C) — 50 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V — 40 mΩ
Gate Threshold Voltage VGS(th) typ — 4 V
Total Gate Charge Qg typ — [DATA_NEEDED: Qg]
功率耗散 (TC=25°C) — 227 W
Integrated Body Diode — Yes - ultra-fast CoolMOS CFD7 diode
Lead-Free — Yes
Target Applications — Soft-switching topologies (ZVS phase-shift full-bridge, LLC)

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