IQDH88N06LM5ATMA1 vs IPB60R040CFD7ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IQDH88N06LM5ATMA1 sa pamamagitan ng Infineon at IPB60R040CFD7ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQDH88N06LM5ATMA1 - 60V 447A 0.86mOhm N-FET | Infineon OptiMOS 5
IQDH88N06LM5ATMA1 ✓ NakahandaInfineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IQDH88N06LM5ATMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | — | In Stock |
| Presyo ng Yunit (USD) | — | $5.19 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench) | Superjunction (SJ) N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Gate-to-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Drain Current (ID) Continuous at Ta | 42 A | — |
| Drain Current (ID) Continuous at Tc | 447 A | — |
| RDS(on) Max at VGS=10V | 0.86 mOhm | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 333 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Packhaging | PG-TSON-8-9 (PQFN 5x6) | PG-TO263-3-2 (D2PAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: TJ max] | -55°C to +150°C |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | [DATA_NEEDED: MSL rating] | 1 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Product Family | — | CoolMOS CFD7 |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 50 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 40 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 4 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| Pwersang Pinahihigpit (TC=25°C) | — | 227 W |
| Integrated Body Diode | — | Yes - ultra-fast CoolMOS CFD7 diode |
| Lead-Free | — | Yes |
| Target Applications | — | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |