IQDH88N06LM5ATMA1 vs IPB60R040CFD7ATMA1 Perbandingan

Perbandingan bersamaan detil IQDH88N06LM5ATMA1 dari Infineon dan IPB60R040CFD7ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IQDH88N06LM5ATMA1 IPB60R040CFD7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Status Stok — In Stock
Harga Unit (USD) — $5,19
FET Type N-Channel —
Technology OptiMOS 5 (trench) Superjunction (SJ) N-Channel MOSFET
Drain-to-Source Voltage (VDS) 60 V —
Gate-to-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Drain Current (ID) Continuous at Ta 42 A —
Drain Current (ID) Continuous at Tc 447 A —
RDS(on) Max at VGS=10V 0.86 mOhm —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 333 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Paket PG-TSON-8-9 (PQFN 5x6) PG-TO263-3-2 (D2PAK)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja [DATA_NEEDED: TJ max] -55°C to +150°C
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL rating] 1
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
Product Family — CoolMOS CFD7
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID, Tc=25°C) — 50 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V — 40 mΩ
Gate Threshold Voltage VGS(th) typ — 4 V
Total Gate Charge Qg typ — [DATA_NEEDED: Qg]
Dissipasi Listrik (TC=25°C) — 227 W
Integrated Body Diode — Yes - ultra-fast CoolMOS CFD7 diode
Lead-Free — Yes
Target Applications — Soft-switching topologies (ZVS phase-shift full-bridge, LLC)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon