IQDH88N06LM5ATMA1 vs IQDH35N03LM5SCATMA1 Comparison

Detailed side-by-side comparison of IQDH88N06LM5ATMA1 by Infineon and IQDH35N03LM5SCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQDH88N06LM5ATMA1

IQDH88N06LM5ATMA1 - 60V 447A 0.86mOhm N-FET | Infineon OptiMOS 5

IQDH88N06LM5ATMA1 βœ“ Active
Infineon
IQDH35N03LM5SCATMA1

IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon

IQDH35N03LM5SCATMA1 βœ“ Active

Specification Comparison

Parameter IQDH88N06LM5ATMA1 IQDH35N03LM5SCATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.05 $2.05
FET Type N-Channel β€”
Technology OptiMOS 5 (trench) OptiMOS 5 (trench, shielded-gate)
Drain-to-Source Voltage (VDS) 60 V β€”
Gate-to-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] β€”
Drain Current (ID) Continuous at Ta 42 A β€”
Drain Current (ID) Continuous at Tc 447 A β€”
RDS(on) Max at VGS=10V 0.86 mOhm β€”
Power Dissipation (PD) at Ta 3 W 2.5 W
Power Dissipation (PD) at Tc 333 W 278 W
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] β€”
Package PG-TSON-8-9 (PQFN 5x6) PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range [DATA_NEEDED: TJ max] -55 C to +175 C
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL rating] 1 (unlimited)
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 β€”
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) max β€” 30 V
Gate-Source Voltage (VGS) max β€” Β±20 V
Continuous Drain Current (ID) at Ta β€” 66 A
Pulsed Drain Current (IDM) at Tc β€” 700 A
On-State Resistance (RDS(on)) max β€” 0.35 mOhm @ VGS=10V
Marking β€” IQDH35N03LM5S

Datasheets & Resources

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