IQDH88N06LM5ATMA1 vs IQDH35N03LM5SCATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQDH88N06LM5ATMA1 disebabkan oleh Infineon dan IQDH35N03LM5SCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon
IQDH35N03LM5SCATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IQDH88N06LM5ATMA1 | IQDH35N03LM5SCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench) | OptiMOS 5 (trench, shielded-gate) |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Gate-to-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Drain Current (ID) Continuous at Ta | 42 A | — |
| Drain Current (ID) Continuous at Tc | 447 A | — |
| RDS(on) Max at VGS=10V | 0.86 mOhm | — |
| Power Dissipation (PD) at Ta | 3 W | 2.5 W |
| Power Dissipation (PD) at Tc | 333 W | 278 W |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Kemasan | PG-TSON-8-9 (PQFN 5x6) | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | [DATA_NEEDED: TJ max] | -55 C to +175 C |
| Status RoHS | Compliant | Compliant |
| Aras MSL | [DATA_NEEDED: MSL rating] | 1 (unlimited) |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at Ta | — | 66 A |
| Pulsed Drain Current (IDM) at Tc | — | 700 A |
| On-State Resistance (RDS(on)) max | — | 0.35 mOhm @ VGS=10V |
| Marking | — | IQDH35N03LM5S |