IQE020N04LM6CGATMA1 vs ISK057N04LM6ATSA1 Perbandingan

Perbandingan bersamaan detil IQE020N04LM6CGATMA1 dari Infineon dan ISK057N04LM6ATSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IQE020N04LM6CGATMA1 IQE020N04LM6CGATMA1 - 40V 2.0mΩ OptiMOS 6 MOSFET | Infineon

IQE020N04LM6CGATMA1 - 40V 2.0mΩ OptiMOS 6 MOSFET | Infineon

IQE020N04LM6CGATMA1 ✓ Aktif
Infineon
ISK057N04LM6ATSA1 ISK057N04LM6ATSA1 - 40V 64A OptiMOS 6 N-MOSFET PG-VSON-6-1

ISK057N04LM6ATSA1 - 40V 64A OptiMOS 6 N-MOSFET PG-VSON-6-1

ISK057N04LM6ATSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IQE020N04LM6CGATMA1 ISK057N04LM6ATSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 6 —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at TA=25°C 25 A —
Continuous Drain Current (ID) at TC=25°C 166 A —
Power Dissipation (PD) at TA=25°C 2.5 W —
Power Dissipation (PD) at TC=25°C 107 W —
On-State Resistance (RDS(on)) typical @ VGS=10V 2.0 mΩ —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
Gate Charge (Qg) typical [DATA_NEEDED: Qg value] —
Paket PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate) PG-VSON-6-1 (PQFN 2x2 mm)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55°C to +150°C -55C to +150C
Technology OptiMOS 6, TrenchFET-class OptiMOS 6 Trench
Configuration Single N-Channel, source-down —
Status RoHS Compliant Compliant
Level MSL MSL1 (per JEDEC J-STD-020) —
Polarity — N-Channel
Gate-Source Voltage (VGS) Max — ±20 V
Continuous Drain Current (ID) at Ta=25C — 15 A
Continuous Drain Current (ID) at Tc=25C — 64 A
Power Dissipation (PD) at Ta — 2.1 W
Power Dissipation (PD) at Tc — 39.1 W
On-Resistance RDS(on) at VGS=10V — [DATA_NEEDED: typical RDS(on) at 10V]
On-Resistance RDS(on) at VGS=4.5V — 8.3 mOhm
Gate Threshold Voltage (VGS(th)) — 2.3 V (typ)
Total Gate Charge (Qg) at VGS=10V — 12 nC
Input Capacitance (Ciss) — 870 pF
Output Capacitance (Coss) — 290 pF
Reverse Transfer Capacitance (Crss) — 21 pF

Spek dan Sumber

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