IQE020N04LM6CGATMA1 vs ISK057N04LM6ATSA1 比較
詳細並排比較 IQE020N04LM6CGATMA1 由 Infineon 與 ISK057N04LM6ATSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IQE020N04LM6CGATMA1 | ISK057N04LM6ATSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 6 | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TA=25°C | 25 A | — |
| Continuous Drain Current (ID) at TC=25°C | 166 A | — |
| Power Dissipation (PD) at TA=25°C | 2.5 W | — |
| Power Dissipation (PD) at TC=25°C | 107 W | — |
| On-State Resistance (RDS(on)) typical @ VGS=10V | 2.0 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Gate Charge (Qg) typical | [DATA_NEEDED: Qg value] | — |
| 封裝 | PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate) | PG-VSON-6-1 (PQFN 2x2 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55°C to +150°C | -55C to +150C |
| Technology | OptiMOS 6, TrenchFET-class | OptiMOS 6 Trench |
| Configuration | Single N-Channel, source-down | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | MSL1 (per JEDEC J-STD-020) | — |
| Polarity | — | N-Channel |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Continuous Drain Current (ID) at Ta=25C | — | 15 A |
| Continuous Drain Current (ID) at Tc=25C | — | 64 A |
| Power Dissipation (PD) at Ta | — | 2.1 W |
| Power Dissipation (PD) at Tc | — | 39.1 W |
| On-Resistance RDS(on) at VGS=10V | — | [DATA_NEEDED: typical RDS(on) at 10V] |
| On-Resistance RDS(on) at VGS=4.5V | — | 8.3 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | 2.3 V (typ) |
| Total Gate Charge (Qg) at VGS=10V | — | 12 nC |
| Input Capacitance (Ciss) | — | 870 pF |
| Output Capacitance (Coss) | — | 290 pF |
| Reverse Transfer Capacitance (Crss) | — | 21 pF |