IQE020N04LM6CGATMA1 vs ISK057N04LM6ATSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IQE020N04LM6CGATMA1 sa pamamagitan ng Infineon at ISK057N04LM6ATSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQE020N04LM6CGATMA1 - 40V 2.0mΩ OptiMOS 6 MOSFET | Infineon
IQE020N04LM6CGATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IQE020N04LM6CGATMA1 | ISK057N04LM6ATSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 6 | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TA=25°C | 25 A | — |
| Continuous Drain Current (ID) at TC=25°C | 166 A | — |
| Power Dissipation (PD) at TA=25°C | 2.5 W | — |
| Power Dissipation (PD) at TC=25°C | 107 W | — |
| On-State Resistance (RDS(on)) typical @ VGS=10V | 2.0 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Gate Charge (Qg) typical | [DATA_NEEDED: Qg value] | — |
| Packhaging | PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate) | PG-VSON-6-1 (PQFN 2x2 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55°C to +150°C | -55C to +150C |
| Technology | OptiMOS 6, TrenchFET-class | OptiMOS 6 Trench |
| Configuration | Single N-Channel, source-down | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | MSL1 (per JEDEC J-STD-020) | — |
| Polarity | — | N-Channel |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Continuous Drain Current (ID) at Ta=25C | — | 15 A |
| Continuous Drain Current (ID) at Tc=25C | — | 64 A |
| Power Dissipation (PD) at Ta | — | 2.1 W |
| Power Dissipation (PD) at Tc | — | 39.1 W |
| On-Resistance RDS(on) at VGS=10V | — | [DATA_NEEDED: typical RDS(on) at 10V] |
| On-Resistance RDS(on) at VGS=4.5V | — | 8.3 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | 2.3 V (typ) |
| Total Gate Charge (Qg) at VGS=10V | — | 12 nC |
| Input Capacitance (Ciss) | — | 870 pF |
| Output Capacitance (Coss) | — | 290 pF |
| Reverse Transfer Capacitance (Crss) | — | 21 pF |