IQE050N08NM5CGSCATMA1 vs IQE050N08NM5CGATMA1 Comparison
Detailed side-by-side comparison of IQE050N08NM5CGSCATMA1 by Infineon and IQE050N08NM5CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE050N08NM5CGSCATMA1
IQE050N08NM5CGSCATMA1 - 80V 99A OptiMOS 5 N-Channel MOSFET | Infineon
IQE050N08NM5CGSCATMA1 β ActiveInfineon
IQE050N08NM5CGATMA1
IQE050N08NM5CGATMA1 - 80V N-Ch MOSFET 5mΞ© Source-Down | Infineon
IQE050N08NM5CGATMA1 β ActiveSpecification Comparison
| Parameter | IQE050N08NM5CGSCATMA1 | IQE050N08NM5CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.74 | $1.75 |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 5 (trench) | OptiMOS 5 (Source-Down) |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (ID) at TC | 99 A | β |
| Continuous Drain Current (ID) at TA | 16 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance RDS(on) max at VGS=10V | 5.0 mOhm | β |
| Gate Threshold Voltage VGS(th) typ | 3.8 V | β |
| Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | β |
| Total Power Dissipation at TC (PD) | 100 W | β |
| Total Power Dissipation at TA (PD) | 2.5 W | β |
| Operating Temperature Range | -55C to +175C (junction, typical) | β |
| Package | PG-WHTFN-9-1 (Source-Down) | PG-TTFN-9-1 (Surface Mount) |
| Mounting Type | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Lead-free, RoHS compliant | β |
| MSL Level | 1 | [DATA_NEEDED: MSL rating] |
| Continuous Drain Current (Ta) | β | 16 A |
| Continuous Drain Current (Tc) | β | 101 A |
| On-Resistance RDS(on) Max | β | 5.0 mΞ© |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 100 W |
| Gate Threshold Vgs(th) Typ | β | [DATA_NEEDED: Vgs(th) typical value] |
| Operating Temperature | β | -55Β°C to +175Β°C (TJ max) |
| Total Gate Charge Qg Typ | β | [DATA_NEEDED: total gate charge Qg typical] |
| RoHS Status | β | Compliant |