IQE050N08NM5CGSCATMA1 vs IQE050N08NM5CGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE050N08NM5CGSCATMA1 disebabkan oleh Infineon dan IQE050N08NM5CGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IQE050N08NM5CGSCATMA1 IQE050N08NM5CGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Technology OptiMOS 5 (trench) OptiMOS 5 (Source-Down)
Drain-Source Voltage (VDS) 80 V 80 V
Continuous Drain Current (ID) at TC 99 A —
Continuous Drain Current (ID) at TA 16 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max at VGS=10V 5.0 mOhm —
Gate Threshold Voltage VGS(th) typ 3.8 V —
Gate Charge Qg typ [DATA_NEEDED: total gate charge] —
Total Power Dissipation at TC (PD) 100 W —
Total Power Dissipation at TA (PD) 2.5 W —
Gambaran Suhu Operasi -55C to +175C (junction, typical) —
Kemasan PG-WHTFN-9-1 (Source-Down) PG-TTFN-9-1 (Surface Mount)
Jenis Pemasangan Surface Mount Surface Mount
Lead-Free / RoHS Lead-free, RoHS compliant —
Aras MSL 1 [DATA_NEEDED: MSL rating]
Continuous Drain Current (Ta) — 16 A
Continuous Drain Current (Tc) — 101 A
On-Resistance RDS(on) Max — 5.0 mΩ
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 100 W
Gate Threshold Vgs(th) Typ — [DATA_NEEDED: Vgs(th) typical value]
Suhu Operasi — -55°C to +175°C (TJ max)
Total Gate Charge Qg Typ — [DATA_NEEDED: total gate charge Qg typical]
Status RoHS — Compliant

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