IQE050N08NM5CGSCATMA1 vs IQE050N08NM5CGATMA1 比較
詳細並排比較 IQE050N08NM5CGSCATMA1 由 Infineon 與 IQE050N08NM5CGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IQE050N08NM5CGSCATMA1 - 80V 99A OptiMOS 5 N-Channel MOSFET | Infineon
IQE050N08NM5CGSCATMA1 ✓ 啟用中規格比較
| 參數 | IQE050N08NM5CGSCATMA1 | IQE050N08NM5CGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 5 (trench) | OptiMOS 5 (Source-Down) |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (ID) at TC | 99 A | — |
| Continuous Drain Current (ID) at TA | 16 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | 5.0 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 3.8 V | — |
| Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | — |
| Total Power Dissipation at TC (PD) | 100 W | — |
| Total Power Dissipation at TA (PD) | 2.5 W | — |
| 工作溫度範圍 | -55C to +175C (junction, typical) | — |
| 封裝 | PG-WHTFN-9-1 (Source-Down) | PG-TTFN-9-1 (Surface Mount) |
| 安裝類型 | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Lead-free, RoHS compliant | — |
| MSL 等級 | 1 | [DATA_NEEDED: MSL rating] |
| Continuous Drain Current (Ta) | — | 16 A |
| Continuous Drain Current (Tc) | — | 101 A |
| On-Resistance RDS(on) Max | — | 5.0 mΩ |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 100 W |
| Gate Threshold Vgs(th) Typ | — | [DATA_NEEDED: Vgs(th) typical value] |
| 工作溫度 | — | -55°C to +175°C (TJ max) |
| Total Gate Charge Qg Typ | — | [DATA_NEEDED: total gate charge Qg typical] |
| RoHS 狀態 | — | Compliant |