IRS21814MTRPBF - 600V Half-Bridge Gate Driver 1.9A/2.3A | Infineon
MPN: IRS21814MTRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.62 | $1.62 |
| 10 | $1.45 | $14.50 |
| 100 | $1.21 | $121.00 |
| 500 | $1.05 | $525.00 |
| 1,000 | $0.92 | $920.00 |
| 2,500 | $0.81 | $2,025.00 |
IRS21814MTRPBF Overview
A gate driver IC is a power-management device that sits between a low-power control signal (from a microcontroller or PWM controller) and a high-power switching transistor (MOSFET or IGBT). The driver's job is to translate the weak logic-level command into a strong, fast, properly leveled gate-source voltage swing that can rapidly charge and discharge the gate capacitance of the power switch. The IRS21814MTRPBF belongs to the half-bridge driver category - a sub-family of gate-driver ICs that contains both a high-side and a low-side channel on one die, enabling direct drive of one phase leg of a bridge converter without external level-shift circuitry.
Key features of this driver include: floating channel designed for bootstrap operation, fully operational to +600 V with tolerance to negative transient voltages (dV/dt immune), undervoltage lockout (UVLO) on both VCC and VBS rails, matched propagation delay between high-side and low-side channels to minimize dead-time distortion, and a 3.3 V/5 V input-logic interface that connects directly to microcontrollers and DSPs. The exposed thermal pad on the bottom of the MLPQ package reduces junction-to-PCB thermal resistance for improved switching losses.
Architecturally, the IRS21814MTRPBF uses Infineon's proprietary HVIC and latch-immune CMOS process, allowing the high-side output stage to float up to 600 V above the low-side return while remaining galvanically isolated through level-shifters internal to the die. The output buffer is designed for minimum driver cross-conduction, preventing shoot-through currents in the driven half-bridge. The dead-time and timing are externally controlled by the user's PWM generator.
Typical applications include motor drives (BLDC/PMSM), solar inverters, switched-mode power supplies (SMPS), induction-heating converters, and Class D audio amplifiers. The 600 V rating makes it well-suited for offline (mains-rectified) systems up to 230 V AC without requiring additional high-side isolation components.
When designing with this part, select a bootstrap diode with fast reverse recovery and a low-leakage blocking diode rated for the high-side rail voltage. Place the VCC bypass capacitor (typically 0.1 uF + 10 uF ceramic) and the VBS bootstrap capacitor (typically 0.1 uF + 1 uF ceramic) as close as possible to their respective pins to minimize switching-noise-induced UVLO events.
This page synthesizes distributor pricing as of 2026-09-15, drop-in MLPQ-16 alternatives, and practical design notes that go beyond the manufacturer datasheet's typical-application schematic.
Drop-in alternatives for IRS21814MTRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRS21814MTRPBF (same form factor and footprint) β differing in Package, Logic Input Compatibility, Topology.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRS21814MPBF
β Drop-Inπ Reference alternative (not in catalog)
IRS21867STRPBF
β Drop-Inβ In Stock
$1.55 / Unit
View Datasheet βIR2110SPBF
β Drop-Inβ In Stock
$1.98 / Unit
View Datasheet βIRS21814MTRPBF Maximum Ratings & Electrical Characteristics
| Configuration | High and Low Side, Independent |
| Driver Channels | 2 (half-bridge) |
| Gate Drive Supply Voltage (VCC) | 10 V to 20 V |
| Floating Supply Voltage (VBS) | 10 V to 20 V (bootstrap) |
| Offset Voltage (High-Side) | Up to +600 V |
| Peak Source Current (typ.) | 1.9 A |
| Peak Sink Current (typ.) | 2.3 A |
| Logic Input Compatibility | 3.3 V and 5 V CMOS/LSTTL |
| Propagation Delay (typ.) | 180 ns |
| Undervoltage Lockout | Yes (VCC and VBS) |
| dV/dt Immunity | Yes (negative-transient tolerant) |
| Package | 16-MLPQ (4x4 mm) with Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -40C to +125C |
| Packaging | Tape & Reel |
| RoHS Status | Compliant |
IRS21814MTRPBF Pin Configuration
| Pin 1 | VCC β Logic and low-side gate drive supply (10-20 V) |
| Pin 2 | HIN β High-side logic input (CMOS/LSTTL, 3.3V/5V compatible) |
| Pin 3 | LIN β Low-side logic input (CMOS/LSTTL, 3.3V/5V compatible) |
| Pin 4 | COM β Low-side return (ground reference for low-side driver) |
| Pin 5 | LO β Low-side gate drive output |
| Pin 6 | VS β High-side floating supply return / half-bridge midpoint |
| Pin 7 | HO β High-side gate drive output |
| Pin 8 | VBS β High-side floating supply (bootstrap, 10-20 V above VS) |
| Pin 9 | NC β Not connected (per datasheet) |
| Pin 10 | NC β Not connected (per datasheet) |
| Pin 11 | NC β Not connected (per datasheet) |
| Pin 12 | NC β Not connected (per datasheet) |
| Pin 13 | NC β Not connected (per datasheet) |
| Pin 14 | NC β Not connected (per datasheet) |
| Pin 15 | NC β Not connected (per datasheet) |
| Pin 16 | NC β Not connected (per datasheet) |
| Pin EP | Thermal Pad β Exposed thermal pad - solder to PCB ground pour for heat dissipation |
Typical Applications
IRS21814MTRPBF is suitable for 7 applications: BLDC / PMSM Motor Drives, Solar Inverters and String Inverters, Switched-Mode Power Supplies (SMPS), Induction Heating Cooktops, Class D Audio Amplifiers, Uninterruptible Power Supplies (UPS), Industrial Welding and Plasma Cutters.
BLDC / PMSM Motor Drives
The IRS21814MTRPBF's 600 V floating channel and 1.9 A/2.3 A source/sink drive strength make it well-suited for compact three-phase brushless DC and permanent-magnet motor drives up to 230 V AC rectified bus. Each motor phase leg requires one half-bridge driver; the IRS21814MTRPBF drives the high-side and low-side MOSFETs of one leg from independent HIN/LIN PWM inputs. The 180 ns propagation delay and matched channel timing preserve the PWM duty cycle integrity at switching frequencies up to 50-100 kHz. Per the Infineon datasheet, the dV/dt-immune floating channel tolerates the fast switching transients of hard-switched motor phases, while the exposed thermal pad keeps junction temperature in check during continuous PWM operation. Trade-off: the IRS21814MTRPBF requires external dead-time generation by the MCU, unlike the IR2109SPBF which inserts its own - pick IRS21814MTRPBF when firmware control of dead-time is preferred.
Recommended
Solar Inverters and String Inverters
In grid-tied string inverters, the IRS21814MTRPBF drives the IGBT or superjunction MOSFET half-bridge in the DC-AC conversion stage up to a 600 V DC bus. Its 10-20 V gate drive supply covers standard IGBT/MOSFET gate thresholds (typically 12-15 V), and the 600 V offset rating covers residential 400 V DC-bus designs with ample margin. The 1.9 A source current charges MOSFET gate capacitances quickly enough to keep switching losses manageable at 20-50 kHz PWM frequencies typical of transformerless string inverters. The bootstrap supply design (single VBS pin with external diode + capacitor) keeps the high-side bias simple, and the undervoltage lockout prevents the driven switches from operating in their linear region during supply brownouts. The compact 4x4 mm MLPQ footprint is ideal for high-density inverter PCB layouts where every square millimeter matters.
Recommended
Switched-Mode Power Supplies (SMPS)
The IRS21814MTRPBF drives the primary-side half-bridge in offline SMPS topologies such as half-bridge LLC, phase-shifted full-bridge (with two IRS21814MTRPBF units), and two-switch forward converters. Its 3.3 V logic-compatible inputs interface directly with digital PFC + LLC controllers from TI, ON Semi, and Infineon without level shifters. The 180 ns propagation delay adds minimal delay to the control loop, important for high-bandwidth peak-current-mode control. The exposed thermal pad supports continuous switching at full duty cycle at moderate power levels up to 500-700 W per phase. According to the Infineon datasheet, the floating channel's dV/dt immunity prevents false triggering during the rapid voltage transitions of the half-bridge midpoint (VS node), which would otherwise inject spurious pulses into the high-side gate drive.
Recommended
Induction Heating Cooktops
Induction-heating resonant converters, the IRS21814MTRPBF drives the high-frequency half-bridge (typically 20-100 kHz) feeding the resonant coil. The 600 V rating handles the resonant tank voltage swings which can exceed the DC bus by 2-3x during zero-voltage-switching transients, and the dV/dt-immune floating channel tolerates these steep edges. The 1.9 A source current rapidly charges the IGBT gate capacitance, minimizing turn-on switching loss - critical for efficiency in induction heating where conduction losses are minimal but switching losses dominate. The IRS21814MTRPBF's compact 4x4 mm MLPQ package enables slim cooktop PCB designs where multiple heating zones must fit in a small mechanical envelope.
Recommended
Class D Audio Amplifiers
In Class D audio amplifiers, the IRS21814MTRPBF drives the output half-bridge switching at 250-500 kHz PWM, modulating the audio signal into a high-frequency carrier. Its matched propagation delay between high-side and low-side channels minimizes dead-time distortion artifacts that degrade THD+N performance. The 600 V rating supports high-power professional audio amplifiers operating from 400 V DC bus rails, while the 1.9 A/2.3 A source/sink capability handles the gate drive requirements of large-output MOSFETs. The 3.3 V logic-compatible input accepts the PWM output directly from common audio modulator ICs without additional level translation. Trade-off: for sub-100 V battery-powered Class D designs, a lower-voltage gate driver would be more efficient than this 600 V part.
Recommended
Uninterruptible Power Supplies (UPS)
In on-line UPS systems, the IRS21814MTRPBF drives the inverter half-bridge that converts battery DC to AC mains during grid outage. The 600 V rating covers 220 V AC rectified bus with substantial margin, and the bootstrap supply topology simplifies the high-side bias for the inverter leg. The undervoltage lockout prevents the inverter from operating with insufficient gate drive during battery brownout conditions, protecting the IGBTs from linear-region operation. The 180 ns propagation delay is acceptable for 50/60 Hz line-frequency inversion (after the initial DC-DC boost stage). The compact MLPQ package fits into high-density UPS modules where PCB real estate is at a premium.
Recommended
Industrial Welding and Plasma Cutters
In welding inverters and plasma cutters, the IRS21814MTRPBF drives the primary-side IGBT half-bridge in the high-frequency switching converter that steps mains voltage down to welding current. The 600 V rating handles the rectified 230/400 V AC bus, and the 1.9 A/2.3 A source/sink current drives IGBT modules up to several hundred amps of switching current. The dV/dt-immune floating channel ensures reliable operation in the noisy electrical environment of a welding arc, where high dv/dt transients on the high-side are routine. The matched channel propagation delay keeps the half-bridge timing balanced, which is important for current sharing between paralleled IGBT modules in higher-power welders.
Recommended
Recommended Products Summary
Engineering reference data for IRS21814MTRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRS21814MPBF | IRS21867STRPBF | IR2110SPBF |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | 16-MLPQ (4x4) with Exposed Pad | 16-MLPQ (4x4) with Exposed Pad - same | 16-MLPQ (4x4) with Exposed Pad - same | SOIC-14 - DIFFERENT package, requires PCB rework |
| Configuration | Half-Bridge (Independent HS/LS) | Half-Bridge (Independent HS/LS) | Half-Bridge (Independent HS/LS) | Half-Bridge (Independent HS/LS) |
| High-Side Offset Voltage | Up to +600 V | Up to +600 V | Up to +600 V | Up to +600 V |
| Peak Source Current (typ.) | 1.9 A | 1.9 A | 2.5 A | 2.0 A |
| Peak Sink Current (typ.) | 2.3 A | 2.3 A | 2.5 A | 2.0 A |
| Gate Drive Supply Voltage | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V |
| Logic Compatibility | 3.3 V / 5 V CMOS/LSTTL | 3.3 V / 5 V CMOS/LSTTL | 3.3 V / 5 V CMOS/LSTTL | CMOS/TTL (logic threshold ~2.5 V) |
| Packaging Format | Tape & Reel | Tube | Tape & Reel | Tube |
Key Differentiators
- Compact 16-MLPQ 4x4 mm exposed-pad package vs SOIC-14 alternatives (vs IR2110SPBF)
- Higher sink current (2.3 A) than source current (1.9 A) (vs IRS21867STRPBF)
- Independent HIN/LIN inputs vs single-input alternatives (vs IR2109SPBF)
Design Notes
The bootstrap capacitor on the VBS pin must be sized to hold VBS above the UVLO threshold during the entire high-side on-time. Estimated: for a switching frequency of 50 kHz and a high-side on-time of 10 us, a 0.1 uF ceramic VBS capacitor is typically sufficient for gate charge (Qg) below 50 nC, but for high-Qg IGBTs (>100 nC) increase to 1 uF or add a paralleled 0.1 uF + 1 uF combination. Use a low-ESR ceramic (X7R or X7S) and place it within 5 mm of the VBS pin to minimize parasitic inductance.
The 16-MLPQ exposed thermal pad (EP) is the primary heat-dissipation path for the IRS21814MTRPBF. Estimated: with theta_JA of approximately 40-50 C/W on a standard 4-layer PCB with 1 oz copper, the package can dissipate roughly 1-1.5 W continuously without exceeding 125C junction at 25C ambient. For higher dissipation (e.g. sustained 100 kHz switching into a 100 nC Qg IGBT), increase PCB copper area under the EP or add thermal vias to an internal ground plane. Solder mask openings under the EP must be maximized per Infineon's land-pattern recommendation.
Route the high-side HO trace and the low-side LO trace on separate PCB layers or with significant spacing to prevent capacitive coupling between the two channels. Keep the COM trace short and direct to the source of the low-side MOSFET; a long COM trace creates a parasitic inductance that resonates with the low-side MOSFET's Cgs and can inject voltage spikes into the LIN logic input. Place a 0.1 uF + 10 uF ceramic bypass combination on VCC within 3 mm of pin 1 to suppress switching noise on the logic supply rail.
Do not exceed the absolute maximum VBS voltage of 20 V or VCC voltage of 20 V - both rails are internally clamped but sustained overvoltage reduces IC lifetime. Avoid running the high-side channel continuously (DC on-time); the floating channel is designed for switching operation with periodic refresh of the bootstrap capacitor. If a continuous-on state is required, replace the bootstrap supply with an isolated DC-DC converter feeding VBS directly. Verify dead-time externally - the IRS21814MTRPBF does not insert its own dead-time and shoot-through can damage the driven half-bridge if both HIN and LIN overlap.
Compliance Information
RoHS and lead-free compliant per Infineon product page. Not AEC-Q100 qualified (industrial-grade only). Halogen-free per Infineon product statement.
