IR2181STRPBF vs IR2101STRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IR2181STRPBF sa pamamagitan ng Infineon at IR2101STRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IR2181STRPBF IR2101STRPBF
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Configuration High and Low Side, Independent Half-Bridge (High-Side and Low-Side), Independent
Input Type Non-Inverting —
Supply Voltage (VCC) 10 V to 20 V —
Logic Input Compatibility 3.3 V and 5 V 3.3 V / 5 V / 15 V CMOS/LSTTL
Output Current (Source) 1.9 A peak —
Output Current (Sink) 2.3 A peak —
High-Side Floating Supply Voltage (VBS) Up to 600 V offset —
Propagation Delay (typ) 180 ns —
Rise Time (typ) [DATA_NEEDED: rise time] —
Fall Time (typ) [DATA_NEEDED: fall time] —
dV/dt Immunity Yes —
Negative Transient Voltage Tolerance Yes —
Undervoltage Lockout Independent for high-side and low-side —
Packhaging 8-SOIC (0.154", 3.90 mm width) 8-SOIC (0.154 inch, 3.90 mm Width)
Hanay ng Temperature na Operasyon -40 C to +125 C —
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL [DATA_NEEDED: MSL level] MSL 3
Tindminan RoHS Compliant (PBF suffix) Compliant
Lead-Free Yes —
Number of Drivers — 2
Driver Type — Non-Inverting
Maximum Offset Voltage — 600 V
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Source Current (Typ.) — 210 mA
Sink Current (Typ.) — 360 mA
Propagation Delay (Typ.) — 160 ns
Rise Time (Typ.) — [DATA_NEEDED: rise time]
Fall Time (Typ.) — [DATA_NEEDED: fall time]
Bootstrap Diode — Integrated
Undervoltage Lockout (UVLO) — Yes (VCC and VBS)
Negative Transient Immunity on VS — Yes (dV/dt immune)
Temperature na Operasyon — -40 C to +125 C

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