IRF1310NPBF vs IRF3710ZPBF Comparison

Detailed side-by-side comparison of IRF1310NPBF by Infineon and IRF3710ZPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF1310NPBF IRF3710ZPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.98 $0.88
FET Type N-Channel β€”
Drain-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID) at TC=25C 42 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM value] β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V 36 mOhm β€”
Total Gate Charge (Qg) 73.3 nC 82 nC (typical)
Gate-Source Charge (Qgs) [DATA_NEEDED: Qgs value] β€”
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd value] β€”
Power Dissipation (PD) at TC=25C 160 W β€”
Maximum Junction Temperature 175 C β€”
Operating Temperature Range -55 C to +175 C β€”
Package TO-220AB (through-hole) TO-220AB (through-hole, 3 pins)
Mounting Type Through Hole Through Hole
Technology HEXFET HEXFET (Advanced Process)
RoHS Status Compliant (PBF suffix) Compliant (PBF suffix)
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (Vdss) β€” 100 V
Continuous Drain Current (Id) at Tc=25C β€” 59 A
Pulsed Drain Current (Idm) β€” [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (Pd) at Tc=25C β€” 160 W
On-Resistance RDS(on) at VGS=10V β€” 18 mOhm (typical)
Gate Threshold Voltage VGS(th) β€” [DATA_NEEDED: gate threshold voltage]
Maximum Junction Operating Temperature β€” 175 C
Gate Drive Voltage (Optimized) β€” 10 V
Pin Configuration β€” G-D-S (Gate-Drain-Source, standard TO-220)
Qualification Standard β€” JEDEC, Normal Level
Lead-Free β€” Yes

Datasheets & Resources

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