IRF1310NPBF vs IRF3710ZPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF1310NPBF disebabkan oleh Infineon dan IRF3710ZPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF1310NPBF | IRF3710ZPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25C | 42 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM value] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | 36 mOhm | — |
| Total Gate Charge (Qg) | 73.3 nC | 82 nC (typical) |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs value] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd value] | — |
| Power Dissipation (PD) at TC=25C | 160 W | — |
| Maximum Junction Temperature | 175 C | — |
| Gambaran Suhu Operasi | -55 C to +175 C | — |
| Kemasan | TO-220AB (through-hole) | TO-220AB (through-hole, 3 pins) |
| Jenis Pemasangan | Through Hole | Through Hole |
| Technology | HEXFET | HEXFET (Advanced Process) |
| Status RoHS | Compliant (PBF suffix) | Compliant (PBF suffix) |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) at Tc=25C | — | 59 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (Pd) at Tc=25C | — | 160 W |
| On-Resistance RDS(on) at VGS=10V | — | 18 mOhm (typical) |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: gate threshold voltage] |
| Maximum Junction Operating Temperature | — | 175 C |
| Gate Drive Voltage (Optimized) | — | 10 V |
| Pin Configuration | — | G-D-S (Gate-Drain-Source, standard TO-220) |
| Qualification Standard | — | JEDEC, Normal Level |
| Lead-Free | — | Yes |