IRF1310NPBF vs IRF3710ZPBF 比較
詳細並排比較 IRF1310NPBF 由 Infineon 與 IRF3710ZPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF1310NPBF | IRF3710ZPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25C | 42 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM value] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | 36 mOhm | — |
| Total Gate Charge (Qg) | 73.3 nC | 82 nC (typical) |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs value] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd value] | — |
| Power Dissipation (PD) at TC=25C | 160 W | — |
| Maximum Junction Temperature | 175 C | — |
| 工作溫度範圍 | -55 C to +175 C | — |
| 封裝 | TO-220AB (through-hole) | TO-220AB (through-hole, 3 pins) |
| 安裝類型 | Through Hole | Through Hole |
| Technology | HEXFET | HEXFET (Advanced Process) |
| RoHS 狀態 | Compliant (PBF suffix) | Compliant (PBF suffix) |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) at Tc=25C | — | 59 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (Pd) at Tc=25C | — | 160 W |
| On-Resistance RDS(on) at VGS=10V | — | 18 mOhm (typical) |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: gate threshold voltage] |
| Maximum Junction Operating Temperature | — | 175 C |
| Gate Drive Voltage (Optimized) | — | 10 V |
| Pin Configuration | — | G-D-S (Gate-Drain-Source, standard TO-220) |
| Qualification Standard | — | JEDEC, Normal Level |
| Lead-Free | — | Yes |