IRF1310NPBF vs IRF3710ZPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF1310NPBF sa pamamagitan ng Infineon at IRF3710ZPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF1310NPBF IRF3710ZPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25C 42 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM value] —
Gate-Source Voltage (VGS) max ±20 V —
Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V 36 mOhm —
Total Gate Charge (Qg) 73.3 nC 82 nC (typical)
Gate-Source Charge (Qgs) [DATA_NEEDED: Qgs value] —
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd value] —
Power Dissipation (PD) at TC=25C 160 W —
Maximum Junction Temperature 175 C —
Hanay ng Temperature na Operasyon -55 C to +175 C —
Packhaging TO-220AB (through-hole) TO-220AB (through-hole, 3 pins)
Uri ng Pagpapasok Through Hole Through Hole
Technology HEXFET HEXFET (Advanced Process)
Tindminan RoHS Compliant (PBF suffix) Compliant (PBF suffix)
Uri ng Transistor — N-Channel MOSFET
Drain-Source Voltage (Vdss) — 100 V
Continuous Drain Current (Id) at Tc=25C — 59 A
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (Pd) at Tc=25C — 160 W
On-Resistance RDS(on) at VGS=10V — 18 mOhm (typical)
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: gate threshold voltage]
Maximum Junction Operating Temperature — 175 C
Gate Drive Voltage (Optimized) — 10 V
Pin Configuration — G-D-S (Gate-Drain-Source, standard TO-220)
Qualification Standard — JEDEC, Normal Level
Lead-Free — Yes

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