IRF4905LPBF vs IRLS3036TRLPBF Perbandingan

Perbandingan bersamaan detil IRF4905LPBF dari Infineon dan IRLS3036TRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF4905LPBF IRLS3036TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel N-Channel
Drain-Source Voltage (Vds) -55 V —
Continuous Drain Current (Id) @ Tc=25C -74 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] 1100 A
On-Resistance Rds(on) max @ Vgs=-10V 20 mOhm —
Gate Threshold Voltage Vgs(th) typ [DATA_NEEDED: Vgs(th) typical] —
Gate-Source Voltage (Vgs) max ±20 V [DATA_NEEDED: Vgs max +/- V]
Total Power Dissipation (Ptot) @ Tc=25C 200 W —
Suhu Hubung Kerja -55C to +150C —
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC value] —
Rise Time (tr) typ [DATA_NEEDED: rise time] —
Fall Time (tf) typ [DATA_NEEDED: fall time] —
Paket TO-262 (I2PAK), through-hole, 3-pin D2PAK (TO-263), surface mount
Technology HEXFET (IR MOSFET) IR HEXFET (planar DMOS)
Tipe Mounting Through Hole Surface Mount
Lead-Free / RoHS Yes (PbF suffix) —
Avalanche Rated Yes —
Drain-Source Voltage (Vdss) — 60 V
Continuous Drain Current (Id) at Tc=25C — 270 A
Continuous Drain Current (Id) at Tc=100C — 195 A
Rds(on) max @ Vgs=10V — 1.9 mOhm
Gate-Source Threshold Voltage (Vgs(th)) — Logic level (see datasheet for exact value) [DATA_NEEDED: Vgs(th) typical/min/max]
Total Gate Charge (Qg) typ — 91 nC
Power Dissipation (Pd) at Tc=25C — 380 W
Rentang Suhu Kerja — -55C to +175C
Level MSL — 1
Status RoHS — Compliant (PBF suffix)
Lead-Free — Yes (PBF suffix)
Integrated Body Diode — Yes (avalanche rated)

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