IRF4905LPBF vs IRLS3036TRLPBF 比較

詳細並排比較 IRF4905LPBF 由 Infineon 與 IRLS3036TRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRLS3036TRLPBF IRLS3036TRLPBF - 60V 270A N-Channel HEXFET MOSFET | Infineon

IRLS3036TRLPBF - 60V 270A N-Channel HEXFET MOSFET | Infineon

IRLS3036TRLPBF ✓ 啟用中

規格比較

參數 IRF4905LPBF IRLS3036TRLPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Polarity P-Channel N-Channel
Drain-Source Voltage (Vds) -55 V —
Continuous Drain Current (Id) @ Tc=25C -74 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] 1100 A
On-Resistance Rds(on) max @ Vgs=-10V 20 mOhm —
Gate Threshold Voltage Vgs(th) typ [DATA_NEEDED: Vgs(th) typical] —
Gate-Source Voltage (Vgs) max ±20 V [DATA_NEEDED: Vgs max +/- V]
Total Power Dissipation (Ptot) @ Tc=25C 200 W —
工作接面溫度 -55C to +150C —
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC value] —
Rise Time (tr) typ [DATA_NEEDED: rise time] —
Fall Time (tf) typ [DATA_NEEDED: fall time] —
封裝 TO-262 (I2PAK), through-hole, 3-pin D2PAK (TO-263), surface mount
Technology HEXFET (IR MOSFET) IR HEXFET (planar DMOS)
安裝類型 Through Hole Surface Mount
Lead-Free / RoHS Yes (PbF suffix) —
Avalanche Rated Yes —
Drain-Source Voltage (Vdss) — 60 V
Continuous Drain Current (Id) at Tc=25C — 270 A
Continuous Drain Current (Id) at Tc=100C — 195 A
Rds(on) max @ Vgs=10V — 1.9 mOhm
Gate-Source Threshold Voltage (Vgs(th)) — Logic level (see datasheet for exact value) [DATA_NEEDED: Vgs(th) typical/min/max]
Total Gate Charge (Qg) typ — 91 nC
Power Dissipation (Pd) at Tc=25C — 380 W
工作溫度範圍 — -55C to +175C
MSL 等級 — 1
RoHS 狀態 — Compliant (PBF suffix)
Lead-Free — Yes (PBF suffix)
Integrated Body Diode — Yes (avalanche rated)

資料表與資源

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