IRF640NPBF vs IRLR2905TRPBF Comparison
Detailed side-by-side comparison of IRF640NPBF by Infineon and IRLR2905TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF640NPBF | IRLR2905TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Drain-to-Source Voltage (VDS) | 200 V | 55 V |
| Continuous Drain Current (ID) at Tc | 18 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current value] |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-to-Source On-Resistance (RDS(on)) | 150 mOhm max at VGS = 10 V | — |
| Power Dissipation (PD) at Tc=25C | 150 W | 110 W |
| Total Gate Charge (Qg) | 44.7 nC | — |
| Operating Junction Temperature | -55C to +150C | -55C to +175C |
| Technology | HEXFET (5th Generation) | HEXFET (IR MOSFET, fifth generation) |
| Transistor Type | N-Channel Enhancement Mode | — |
| Package | TO-220AB (through-hole, 3-pin) | TO-252AA (DPAK), surface mount |
| Mounting Type | Through Hole | Surface Mount |
| Avalanche Energy Rated | Yes | — |
| dv/dt Rating | Dynamic, rated | — |
| RoHS Status | Compliant | — |
| Lead-Free | Yes (PBF suffix) | — |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| FET Type | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc=25C | — | 42 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 27 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Gate Charge (Qg) | — | 32 nC |
| Avalanche Rated | — | Yes |
| Lead-Free / RoHS | — | Yes / Compliant |
| MSL Level | — | [DATA_NEEDED: MSL rating] |
| Gate Drive | — | Logic-level compatible |