IRF640NPBF vs IRLR2905TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF640NPBF disebabkan oleh Infineon dan IRLR2905TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF640NPBF | IRLR2905TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Drain-to-Source Voltage (VDS) | 200 V | 55 V |
| Continuous Drain Current (ID) at Tc | 18 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current value] |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-to-Source On-Resistance (RDS(on)) | 150 mOhm max at VGS = 10 V | — |
| Power Dissipation (PD) at Tc=25C | 150 W | 110 W |
| Total Gate Charge (Qg) | 44.7 nC | — |
| Suhu Hubungan Operasi | -55C to +150C | -55C to +175C |
| Technology | HEXFET (5th Generation) | HEXFET (IR MOSFET, fifth generation) |
| Jenis Transistor | N-Channel Enhancement Mode | — |
| Kemasan | TO-220AB (through-hole, 3-pin) | TO-252AA (DPAK), surface mount |
| Jenis Pemasangan | Through Hole | Surface Mount |
| Avalanche Energy Rated | Yes | — |
| dv/dt Rating | Dynamic, rated | — |
| Status RoHS | Compliant | — |
| Lead-Free | Yes (PBF suffix) | — |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| FET Type | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc=25C | — | 42 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 27 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Gate Charge (Qg) | — | 32 nC |
| Avalanche Rated | — | Yes |
| Lead-Free / RoHS | — | Yes / Compliant |
| Aras MSL | — | [DATA_NEEDED: MSL rating] |
| Gate Drive | — | Logic-level compatible |