IRF640NPBF vs IRLR2905TRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRF640NPBF sa pamamagitan ng Infineon at IRLR2905TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRF640NPBF | IRLR2905TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Drain-to-Source Voltage (VDS) | 200 V | 55 V |
| Continuous Drain Current (ID) at Tc | 18 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current value] |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-to-Source On-Resistance (RDS(on)) | 150 mOhm max at VGS = 10 V | — |
| Power Dissipation (PD) at Tc=25C | 150 W | 110 W |
| Total Gate Charge (Qg) | 44.7 nC | — |
| Temperature ng Junction na Operasyon | -55C to +150C | -55C to +175C |
| Technology | HEXFET (5th Generation) | HEXFET (IR MOSFET, fifth generation) |
| Uri ng Transistor | N-Channel Enhancement Mode | — |
| Packhaging | TO-220AB (through-hole, 3-pin) | TO-252AA (DPAK), surface mount |
| Uri ng Pagpapasok | Through Hole | Surface Mount |
| Avalanche Energy Rated | Yes | — |
| dv/dt Rating | Dynamic, rated | — |
| Tindminan RoHS | Compliant | — |
| Lead-Free | Yes (PBF suffix) | — |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| FET Type | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc=25C | — | 42 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 27 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Gate Charge (Qg) | — | 32 nC |
| Avalanche Rated | — | Yes |
| Lead-Free / RoHS | — | Yes / Compliant |
| Level ng MSL | — | [DATA_NEEDED: MSL rating] |
| Gate Drive | — | Logic-level compatible |