IRF640NSTRLPBF - 200V 18A N-Channel HEXFET MOSFET | Infineon
MPN: IRF640NSTRLPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.24 | $124.00 |
| 500 | $1.05 | $525.00 |
| 1,000 | $0.89 | $890.00 |
Drop-in alternatives for IRF640NSTRLPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRF640NSPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRF640NSTRRPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRF640NPBF
✅ Drop-In✓ In Stock
$0.25 / Unit
View Datasheet →IRFZ48NSTRLPBF
✅ Drop-In✓ In Stock
$1.18 / Unit
View Datasheet →IRF3710STRLPBF
✅ Drop-In✓ In Stock
$1.23 / Unit
View Datasheet →IRFZ24NPBF
✅ Drop-In✓ In Stock
$0.46 / Unit
View Datasheet →IRF640NSTRLPBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | HEXFET (5th generation, trench MOSFET) |
| Drain-to-Source Voltage (VDS) | 200 V |
| Continuous Drain Current (ID, Tc=25C) | 18 A |
| Maximum Power Dissipation (PD, Tc=25C) | 150 W |
| On-Resistance (RDS(on)) at VGS=10V | 0.15 ohm |
| Total Gate Charge (Qg) | 44.7 nC |
| Operating Junction Temperature Range | -55C to +175C |
| Package | D2PAK (TO-263AB), surface mount, 3-pin (2+tab) |
| Mounting Type | Surface Mount (Tape and Reel) |
| Lead-Free (PbF) | Yes |
| RoHS Status | Compliant |
IRF640NSTRLPBF Pin Configuration
| Pin 1 | Gate — MOSFET gate input (VGS drive) |
| Pin 2 | Drain — MOSFET drain (also connected to metal tab) |
| Pin 3 | Source — MOSFET source (return for gate-drive and load) |
Safe Operating Area (DC, Tj=25C)
Typical Applications
IRF640NSTRLPBF is suitable for 6 applications: Switched-Mode Power Supply (SMPS) Primary Switch, DC Motor Speed Control (H-Bridge / Half-Bridge), Uninterruptible Power Supply (UPS) Inverter Stage, High-Voltage Boost / Buck Converter, Solenoid / Relay Driver, Automotive 12V/24V Load Switch.
Switched-Mode Power Supply (SMPS) Primary Switch
The IRF640NSTRLPBF serves as the primary-side high-side switch in offline SMPS converters operating from rectified 120V AC (peak ~170V bus). Its 200V VDS rating provides a 15% safety margin against bus transients, the 0.15 ohm RDS(on) limits conduction loss at 100 kHz switching, and the 44.7 nC Qg keeps gate-drive losses manageable. Compared to planar MOSFETs, the HEXFET trench geometry reduces switching loss by ~25% per the Infineon datasheet.
Recommended
DC Motor Speed Control (H-Bridge / Half-Bridge)
In DC motor speed controllers and unidirectional PWM choppers, the IRF640NSTRLPBF switches the motor winding at audio-band frequencies. Its 18A continuous ID handles fractional-horsepower brushed motors directly, the 0.15 ohm RDS(on) limits I2R heating in the linear-region PWM edge, and the rugged avalanche rating absorbs the back-EMF when commutating inductive loads. The D2PAK package dissipates 150W on a 1 sq-inch copper pour, eliminating external heatsinks up to ~50W loads.
Recommended
Uninterruptible Power Supply (UPS) Inverter Stage
The IRF640NSTRLPBF is widely deployed in low-power UPS inverter stages converting 48V battery bus to 120V AC output. Its 200V VDS supports 48V battery transients up to ~60V and the resulting 170V peak AC swing, while 0.15 ohm RDS(on) keeps full-load efficiency above 92%. The HEXFET ruggedness provides avalanche energy absorption during sudden load transients, which are common in UPS applications. Junction temperature rise is calculated at theta_JC=1.0 C/W per the datasheet, supporting continuous 150W dissipation.
Recommended
High-Voltage Boost / Buck Converter
In 48V-to-120V boost converters or 170V-to-48V buck converters for telecom and industrial buses, the IRF640NSTRLPBF offers an optimal RDS(on) × Qg figure of merit for sub-200 kHz operation. Its 200V VDS provides ample headroom for the high-side switch in a boost topology, while the 0.15 ohm RDS(on) limits duty-cycle conduction loss. The D2PAK tab delivers 1.0 C/W theta_JC, enabling 100W+ continuous output with modest cooling. Per the datasheet, the part is qualified for unclamped inductive switching events.
Recommended
Solenoid / Relay Driver
The IRF640NSTRLPBF drives 24V/48V DC solenoids and relays in industrial automation and process-control systems. Its 18A peak rating handles solenoid inrush currents up to 5x steady-state, and the avalanche energy rating absorbs the inductive kickback when de-energizing the coil without a flyback diode. Switching times in the sub-microsecond range minimize dissipation during the flyback event. The D2PAK footprint allows direct PCB mounting in industrial control modules where heatsinks are impractical.
Recommended
Automotive 12V/24V Load Switch
Although not AEC-Q100 qualified, the IRF640NSTRLPBF is used in non-safety automotive applications such as auxiliary 12V/24V load switching for body controllers, lighting relays, and accessory drivers. Its 200V VDS easily tolerates 24V truck-bus transients up to 60V, the 18A ID handles high-current lamps and motors, and the D2PAK package withstands the underhood thermal environment. For AEC-Q100 requirements, designers should select from Infineon's automotive-grade HEXFET families instead.
Recommended
Recommended Products Summary
Engineering reference data for IRF640NSTRLPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF640NSPBF | IRF640NSTRRPBF | IRF640NPBF | IRFZ48NSTRLPBF | IRF3710STRLPBF |
|---|---|---|---|---|---|---|
| Package | D2PAK (TO-263AB) surface mount | D2PAK (TO-263AB) - same | D2PAK (TO-263AB) - same | TO-220AB through-hole - different footprint | D2PAK - same | D2PAK - same |
| Brand | Infineon (formerly International Rectifier) | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-to-Source Voltage (VDS) | 200 V | 200 V | 200 V | 200 V | 55 V | 100 V |
| Continuous Drain Current (ID, Tc=25C) | 18 A | 18 A | 18 A | 18 A | 72 A | 57 A |
| On-Resistance (RDS(on)) at VGS=10V | 0.15 ohm | 0.15 ohm | 0.15 ohm | 0.15 ohm | 0.008 ohm | 0.025 ohm |
| Total Gate Charge (Qg) | 44.7 nC | 44.7 nC | 44.7 nC | 44.7 nC | 110 nC | 130 nC |
| Maximum Power Dissipation | 150 W | 150 W | 150 W | 150 W | 130 W | 200 W |
| Technology Generation | HEXFET 5th gen | HEXFET 5th gen - same | HEXFET 5th gen - same | HEXFET 5th gen - same | HEXFET - newer gen | HEXFET - newer gen |
Key Differentiators
- Fifth-generation HEXFET trench technology (vs IRFZ48NSTRLPBF)
- Surface-mount D2PAK for automated assembly (vs IRF640NPBF (TO-220AB))
- Tape-and-reel packaging (STR suffix) (vs IRF640NSPBF (tube))
Design Notes
The D2PAK package achieves its 150W rating only with substantial PCB copper cooling. Estimated: with 1 square inch of 2 oz copper on a 1-layer board, the effective theta_JA is approximately 50 C/W; with 4 square inches of 2 oz copper on a 2-layer board, theta_JA drops to about 25 C/W. At full 18A continuous ID with VDS=200V, total power dissipation during switching is dominated by conduction loss: P = I^2 x RDS(on) = 18^2 x 0.15 = 48.6 W. Without proper PCB cooling, the junction will exceed 175C and trigger thermal shutdown. Mount the tab with continuous solder to a copper pour that extends at least 1 cm from the package edges on all sides.
Layout the D2PAK pad with the metal tab as a large exposed thermal land (minimum 6 mm x 8 mm) connected to a flood of 2 oz copper on the top layer. Use thermal vias (0.3 mm drill, 1.0 mm pitch) under the tab to bottom-layer copper to pull heat away from the top side. Place the gate-drive resistor within 5 mm of pin 1 to minimize gate-loop inductance; long gate traces cause ringing that can overshoot VGS(th) and cause false turn-on. The drain trace (pin 2) should be wide and short to handle 18A without significant voltage drop.
Three pitfalls to avoid: (1) Do not drive the gate above +/- 20V VGS - the datasheet absolute maximum is 20V and 10V is sufficient for full enhancement. (2) Do not operate the part in linear (active) region at high current for more than a few milliseconds - the SOA curve shows the part can only sustain 18A at VDS < 1V DC; in the active region thermal runaway is rapid. (3) Do not assume the D2PAK pinout matches TO-220 - the TO-220 part (IRF640NPBF) has G-D-S from left-to-right while D2PAK also has G-D-S but with the tab serving as Drain; always double-check pinout when transitioning between the two packages.
Source-pin inductance is the dominant cause of MOSFET switching loss and ringing. Keep the source return trace from the IRF640NSTRLPBF pin 3 directly back to the gate-driver ground reference; do not share this trace with the load-current return path. Use a Kelvin-source connection (a small dedicated trace from the driver ground to pin 3) when driving at >100 kHz. Place a 10 ohm gate resistor as close to pin 1 as possible to dampen the LC resonance between gate inductance and Ciss; values from 4.7 to 22 ohm are typical depending on switching speed.
Compliance Information
PbF suffix in MPN denotes lead-free compliance per Infineon datasheet. RoHS compliant per DigiKey product listing. Not AEC-Q100 qualified - select from Infineon automotive-grade HEXFET families for automotive applications. Halogen-free status not explicitly stated in verified web data.
