IRF7103TRPBF vs IRF7341GTRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7103TRPBF disebabkan oleh Infineon dan IRF7341GTRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF7103TRPBF | IRF7341GTRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRF7103TRPBF | — |
| FET Type | Dual N-Channel | — |
| Configuration | Common Source, Dual Die | Dual N-Channel |
| Drain-to-Source Voltage (VDS) | 50 V | — |
| Continuous Drain Current (ID) | 3 A | 5.1 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM value] | — |
| On-Resistance RDS(on) max | 130 mOhm @ VGS=10V | — |
| On-Resistance RDS(on) typ | 0.11 ohm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | [DATA_NEEDED: typical VGS(th) value] |
| Total Power Dissipation (PD) | 2 W | — |
| Gambaran Suhu Operasi | -55C to +150C (TJ) | -55 C to +175 C |
| Kemasan | SO-8 (PG-DSO-8-902) | 8-SO (SOIC-8) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | IR MOSFET™ (HEXFET equivalent) | IR HEXFET Planar MOSFET |
| Soldering Method | Vapour phase, infrared, wave soldering | — |
| Aras MSL | 1 | — |
| Lead-Free | Yes (Pb-free per TRPBF suffix) | Yes (PBF suffix) |
| Status RoHS | Compliant | Compliant |
| Drain-Source Voltage (VDS) | — | 55 V |
| On-Resistance (RDS(on)) max | — | 50 mOhm at VGS=10V |
| Power Dissipation (PD) | — | 2.4 W |
| Maximum Junction Temperature | — | 175 C |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typical] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |