IRF7103TRPBF - 50V Dual N-Channel MOSFET, 3A, SO-8 | Infineon
MPN: IRF7103TRPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.92 | $0.92 |
| 10 | $0.78 | $7.80 |
| 100 | $0.65 | $65.00 |
| 500 | $0.54 | $270.00 |
| 1,000 | $0.47 | $470.00 |
IRF7103TRPBF Overview
An N-channel power MOSFET is a voltage-controlled semiconductor switch that conducts current when a gate-source voltage exceeds the threshold. Dual MOSFET arrays integrate two independent MOSFETs in one package to save PCB area in half-bridge, synchronous-rectification, and load-switch topologies. The IRF7103 belongs to the power-MOSFET -> discrete semiconductor -> active component hierarchy.
Key features include a low on-resistance of 0.11 ohm (typ.) at VGS=10V, a logic-level capable gate threshold, and fast switching speeds optimized for DC-DC conversion. The SO-8 (PG-DSO-8-902) package has been modified with a customized leadframe for enhanced thermal characteristics and dual-die capability, allowing up to 2W power dissipation per the manufacturer datasheet. The trench-based IR MOSFET™ cell structure minimizes conduction losses while maintaining robust avalanche ruggedness.
Typical applications include synchronous rectification in buck converters, half-bridge motor drive, low-side load switching in industrial controls, battery protection circuits, and DC fan drivers. The dual-die common-source configuration makes it ideal for synchronous step-down (buck) topologies where two low-side switches are needed.
When designing with this part, ensure the gate drive voltage reaches at least 10V for full enhancement and lowest RDS(on). Add a gate-source resistor (typ. 10 kOhm) to prevent unintended turn-on from dv/dt-induced Miller coupling, and observe the SOA envelope for pulsed loads above 3A. The thermal pad should be soldered to a sufficient copper pour for rated 2W dissipation.
This page synthesizes distributor pricing, drop-in SO-8 alternatives, parametric data, and practical PCB layout guidance that goes beyond the manufacturer datasheet alone.
Drop-in alternatives for IRF7103TRPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRF7103TRPBF (same form factor and footprint) — differing in Operating Temperature Range, Package, Technology, Configuration, Continuous Drain Current (ID).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRF7103TRPBFXTMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IRF7341GTRPBF
✅ Drop-In✓ In Stock
$0.76 / Unit
View Datasheet →IRF7854TRPBF
✅ Drop-In✓ In Stock
$0.48 / Unit
View Datasheet →IRF7103TRPBF Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRF7103TRPBF |
| FET Type | Dual N-Channel |
| Configuration | Common Source, Dual Die |
| Drain-to-Source Voltage (VDS) | 50 V |
| Continuous Drain Current (ID) | 3 A |
| On-Resistance RDS(on) max | 130 mOhm @ VGS=10V |
| On-Resistance RDS(on) typ | 0.11 ohm |
| Total Power Dissipation (PD) | 2 W |
| Operating Temperature Range | -55C to +150C (TJ) |
| Package | SO-8 (PG-DSO-8-902) |
| Mounting Type | Surface Mount |
| Technology | IR MOSFET™ (HEXFET equivalent) |
| Soldering Method | Vapour phase, infrared, wave soldering |
| MSL Level | 1 |
| Lead-Free | Yes (Pb-free per TRPBF suffix) |
| RoHS Status | Compliant |
IRF7103TRPBF Pin Configuration
| Pin 1 | S1 — Source 1 |
| Pin 2 | G1 — Gate 1 |
| Pin 3 | S2 — Source 2 |
| Pin 4 | G2 — Gate 2 |
| Pin 5 | D2 — Drain 2 |
| Pin 6 | D2 — Drain 2 |
| Pin 7 | D1 — Drain 1 |
| Pin 8 | D1 — Drain 1 |
Typical Applications
IRF7103TRPBF is suitable for 6 applications: Synchronous Rectification in Buck Converters, Half-Bridge Motor Drive, Low-Side Load Switching in Industrial Controls, Battery Protection and Discharge Control, DC Fan and Pump Driver, Power OR-ing and Redundancy Switching.
Synchronous Rectification in Buck Converters
The IRF7103TRPBF integrates two N-channel MOSFETs in one SO-8 package, making it well-suited for the low-side synchronous rectifier position in buck converters up to 24V input. Its 50V VDS rating provides ample margin above 24V nominal rails, while 130 mOhm RDS(on) at 10V gate drive keeps conduction losses manageable at 2-3A load currents. Designers place each die in parallel on the same heatsink pad, halving the PCB footprint versus two discrete SOT-23 MOSFETs. The dual-die common-source configuration requires only one bootstrap supply for high-side drive, simplifying gate-driver selection. For point-of-load regulators in telecom and networking equipment, the IRF7103TRPBF achieves acceptable efficiency above 90% at moderate switching frequencies.
Recommended
Half-Bridge Motor Drive
In brushed DC and small BLDC motor drive circuits up to 24V, the IRF7103TRPBF provides both half-bridge switches in one SO-8 package. The 3A continuous rating covers small fan motors, pumps, and hobby servos, while the 50V VDS rating tolerates inductive kick from motor windings when paired with proper freewheeling diodes. Gate drive of 10V from a dedicated gate-driver IC achieves full enhancement and lowest RDS(on). The common-source configuration simplifies the bootstrap capacitor design for the high-side switch. Engineers typically add 100kOhm gate-source resistors to prevent dv/dt-induced turn-on, and a TVS clamp across the motor terminals to limit VDS excursions during braking transients.
Recommended
Low-Side Load Switching in Industrial Controls
Industrial PLC and process-control systems use the IRF7103TRPBF as two independent low-side switches for solenoid valves, relay coils, and indicator lamps drawing up to 3A. The 50V VDS handles 24V industrial bus rails with headroom for transients, while the logic-capable gate threshold accepts 5V microcontroller outputs (with reduced RDS(on) at lower gate drive). The dual-die SO-8 packaging doubles the switching density per square inch versus single-MOSFET SOT-23 parts. Designers add gate pull-down resistors of 10-100kOhm to ensure defined off-state and prevent floating-gate turn-on during MCU reset. The 2W power dissipation envelope supports continuous 1-2A loads on a 1-square-inch copper pour without derating.
Recommended
Battery Protection and Discharge Control
Multi-cell battery packs for portable power tools and e-bikes use the IRF7103TRPBF for low-side discharge control and protection FET functions in 12-24V Li-ion systems. The 50V VDS accommodates series-connected battery stacks up to 12S nominal (50.4V fully charged) within safe operating area. The dual-die integration enables pack-level and cell-level protection in one footprint. Low RDS(on) of 130 mOhm minimizes voltage drop across the protection path, preserving battery runtime. Battery management ICs typically drive the gate through a charge pump to maintain full enhancement even as cell voltage drops. The industrial operating temperature range of -55C to +150C TJ covers automotive underhood and outdoor deployment.
Recommended
DC Fan and Pump Driver
Cooling fans and small DC pumps in computing and white-goods appliances use the IRF7103TRPBF as a PWM-controlled low-side switch at switching frequencies from 25 Hz to 25 kHz. The dual-die package supports variable-speed control of two fans from one IC, simplifying motherboard and appliance designs. Soft-start PWM ramps reduce inrush current that would otherwise stress the fan windings. The 50V VDS rating handles 48V telecom-board fan rails while the 3A current covers fans up to 24W. Gate drive from a microcontroller PWM output works adequately above 5V VGS; for full enhancement, a 10V gate driver or charge pump is preferred. The SO-8 footprint is compatible with hand-soldered prototypes and high-volume reflow assembly.
Recommended
Power OR-ing and Redundancy Switching
Redundant power supply architectures in servers and telecom equipment use the IRF7103TRPBF as OR-ing FETs to prevent reverse current flow between parallel DC sources. Each die serves as one OR-ing switch for a single 12-24V rail. The 50V VDS rating covers typical 48V telecom rails, while the fast switching capability enables sub-100us transfer between supplies during failover. The body diode inherently provides reverse-current blocking during start-up before gate drive is established. Power dissipation is bounded by I²RDS(on) - at 2A load the per-FET loss is roughly 0.5W, well within the 2W SO-8 envelope. The common-source configuration simplifies the gate-bias network, requiring only a pull-up to the source for self-biased turn-off.
Recommended
Recommended Products Summary
Engineering reference data for IRF7103TRPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF7103TRPBFXTMA1 | IRF7341GTRPBF | IRF7854TRPBF |
|---|---|---|---|---|
| Package | SO-8 (PG-DSO-8-902) | SO-8 (PG-DSO-8-902) - identical | SO-8 - same footprint | SO-8 (PQFN) - same footprint |
| Brand | Infineon | Infineon - same | Infineon - same | Infineon - same |
| VDS Max | 50 V | 50 V | 55 V (+10%) | 30 V (-40%) |
| Continuous ID | 3 A | 3 A | 4.5 A (+50%) | 9 A |
| RDS(on) Max @ VGS=10V | 130 mOhm | 130 mOhm - identical | 50 mOhm (-62%) | 9.4 mOhm (-93%) |
| Power Dissipation | 2 W | 2 W - identical | 2 W - same | 2.5 W |
| Configuration | Dual N-Channel Common Source | Dual N-Channel Common Source - identical | Dual N-Channel | Single N-Channel (DirectFET) |
| Technology | IR MOSFET™ (HEXFET equivalent) | IR MOSFET™ - identical | IR MOSFET™ | DirectFET (advanced IR process) |
| RoHS Compliance | Yes (Pb-free) | Yes - identical | Yes | Yes |
Key Differentiators
- Dual-die integration in compact SO-8 (vs Single SOT-23 MOSFET (e.g., IRLML2502))
- Higher VDS rating than comparable dual MOSFETs (vs IRF7102 (dual N-channel, 20V VDS))
- Lower RDS(on) at 10V gate drive versus entry-level duals (vs IRF7341GTRPBF)
Design Notes
Estimated: At 2A continuous load per die with RDS(on)=130 mOhm, conduction loss per FET is roughly I²R = 4 × 0.13 = 0.52 W. With both dies conducting, total package loss is about 1.04 W, well within the 2 W SO-8 envelope at TA=25C. Above 70C ambient, derating is required - either reduce load to 1.5A per die or expand the drain pad copper to roughly 1 square inch to maintain thermal resistance near 50 C/W theta_JA. Solder the SO-8 drain pins (5-8) to a continuous copper pour acting as a thermal spreader for sustained operation above 1A.
Place a 100kOhm gate-source resistor on each gate to ensure a defined off-state during MCU reset or driver fault conditions. Add a 10 ohm gate-series resistor to dampen ringing from the gate-drive loop inductance, particularly when the gate driver is located more than 25 mm from the MOSFET. Keep the high-current loop (drain-source) area minimal - use short, wide PCB traces or polygon pours to minimize parasitic inductance that causes voltage overshoot during switching transients.
Do not assume the IRF7103TRPBF is logic-level - while it can turn on at 4.5V VGS, full enhancement (and lowest RDS(on) of 130 mOhm) requires 10V gate drive. Designers driving directly from a 3.3V or 5V microcontroller will see much higher on-resistance and excessive heating. Also avoid exceeding 50V VDS during inductive switching transients - inductive loads such as motors and solenoids must have a flyback diode or TVS clamp across the drain-source to limit voltage spikes within SOA.
In buck converter layouts, place the high-side and low-side MOSFETs in close proximity with their drains sharing a continuous copper pour that also serves as the thermal pad. Keep the gate-drive traces away from the drain-switching node to avoid dv/dt-induced Miller coupling - a gate trace routed over the drain node can capacitively couple switching transients back to the gate and cause shoot-through. Use a ground-plane return path for the gate-drive loop to minimize loop inductance.
Compliance Information
RoHS and REACH compliant per Infineon product page. Lead-free (TRPBF suffix denotes Pb-free). Not AEC-Q100/AEC-Q101 qualified - industrial and commercial use only; for automotive, contact Infineon field application engineering for qualified parts.
