IRF7343TRPBF vs IRF7389TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7343TRPBF disebabkan oleh Infineon dan IRF7389TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF7343TRPBF | IRF7389TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon (formerly International Rectifier) |
| Part Status | Active | — |
| Jenis Transistor | N and P-Channel Complementary MOSFET Array | — |
| Technology | IR MOSFET (HEXFET Generation V) | HEXFET Generation V (IR MOSFET) |
| Drain-to-Source Voltage (VDS) - N-Channel | 55 V | — |
| Drain-to-Source Voltage (VDS) - P-Channel | 55 V | — |
| Continuous Drain Current (ID) - N-Channel | 4.7 A | — |
| Continuous Drain Current (ID) - P-Channel | 3.4 A | — |
| On-Resistance (RDS(on)) - N-Channel | 0.043 ohm (typical per chipdig.com) | — |
| On-Resistance (RDS(on)) max | 50 mOhm | — |
| Power Dissipation (PD) | 2 W | — |
| Kemasan | 8-SOIC (SO-8) | 8-SO (SOIC-8) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Lead-Free | Yes | — |
| RoHS Compliance | Compliant | — |
| Transistor Polarity | — | N and P Channel |
| Drain-Source Voltage (Vds) | — | 30 V |
| Continuous Drain Current (N-Ch, Id) | — | 7.3 A |
| Continuous Drain Current (P-Ch, Id) | — | -5.3 A |
| On-Resistance RDS(on) Max | — | 29 mOhm |
| Power Dissipation (Pd) | — | 2.5 W |
| Configuration | — | Dual N+P Complementary Half-Bridge |
| Suhu Operasi | — | -55C to +150C |
| Avalanche Rated | — | Yes |
| Lead Free / RoHS | — | Lead Free / RoHS Compliant |
| Aras MSL | — | 1 |