IRF7832TRPBF vs IRFL014NTRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7832TRPBF disebabkan oleh Infineon dan IRFL014NTRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF7832TRPBF IRFL014NTRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRF7832TRPBF —
FET Type N-Channel N-Channel MOSFET, Metal Oxide
Technology HEXFET (trench MOSFET) HEXFET (planar N-channel, fifth generation)
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TA=25C 20 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V 4.0 mOhm —
Gate-Source Voltage (VGS) max +/- 20 V —
Gate Threshold Voltage (VGS(th)) typical 1.0 V to 2.5 V —
Total Gate Charge (Qg) typical 34 nC —
Power Dissipation (PD) at TA=25C 2.5 W —
Gambaran Suhu Operasi -55 C to +150 C (TJ) -55 C to +150 C (junction)
Kemasan 8-SO (SOIC-8) SOT-223 (TO-261-4), 4-pin (3 + tab)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (per JEDEC J-STD-020) Level 1 (per JEDEC J-STD-020)
Status RoHS Compliant —
Lead-Free Yes —
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at 25 C — 1.9 A
Continuous Drain Current (ID) at 70 C — [DATA_NEEDED: ID at 70 C]
Gate-to-Source Voltage (VGS) max — ±20 V
RDS(on) max at VGS=10V — 160 milliohm
Gate Charge (Qg) typical — 7 nC
Threshold Voltage VGS(th) typical — [DATA_NEEDED: VGS(th)]
Power Dissipation (PD) at 25 C — 1.0 W (free air), up to 2.1 W with proper PCB copper
Avalanche Rated — Yes (fully avalanche rated)
dv/dt Rating — Yes (dynamic dv/dt rated)
Lead-Free / RoHS — Yes / Compliant

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga