IRFB3207ZPBF vs IPB019N08N3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFB3207ZPBF disebabkan oleh Infineon dan IPB019N08N3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFB3207ZPBF IPB019N08N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IRFB3207ZPBF —
Series HEXFET OptiMOS 3
Technology N-Channel MOSFET (HEXFET, Z-suffix ruggedized) MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) 75 V —
Continuous Drain Current (ID) at TC=25C 120 A —
Silicon-Limited Drain Current 170 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] —
On-Resistance RDS(on) typ @ VGS=10V 3.3 mOhm —
On-Resistance RDS(on) max @ VGS=10V 4.1 mOhm —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th)] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissition (PD) at TC=25C 300 W —
Suhu Hubungan Operasi -55 C to +175 C —
Kemasan TO-220AB (3-lead through-hole) PG-TO263-7 (D2PAK-6, surface mount)
Jenis Pemasangan Through Hole Surface Mount
Lead-Free / RoHS Yes (PBF suffix = lead-free) —
Aras MSL N/A (through-hole) —
Avalanche Rated Yes (improved Z-variant ruggedness) —
FET Type — N-Channel
Drain-to-Source Voltage (Vdss) — 80 V
Continuous Drain Current (Id) @ Tc=25°C — 180 A
Power Dissipation (Pd) @ Tc=25°C — 300 W
On-Resistance RDS(on) Max @ VGS=10V — 1.9 mΩ
Gate Threshold Voltage (Vgs(th)) — 3.5 V
Drive Voltage (Rds On Max) — 6 V, 10 V
Total Gate Charge (Qg) @ VGS=10V — 206 nC
Input Capacitance (Ciss) — 14.2 nF
Output Capacitance (Coss) — 3.84 nF
Reverse Transfer Capacitance (Crss) — 3.84 nF
Gambaran Suhu Operasi — -55 °C to +175 °C
Status RoHS — Compliant

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