IRFB3207ZPBF vs IPB019N08N3GATMA1 Perbandingan

Perbandingan bersamaan detil IRFB3207ZPBF dari Infineon dan IPB019N08N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFB3207ZPBF IPB019N08N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IRFB3207ZPBF —
Series HEXFET OptiMOS 3
Technology N-Channel MOSFET (HEXFET, Z-suffix ruggedized) MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) 75 V —
Continuous Drain Current (ID) at TC=25C 120 A —
Silicon-Limited Drain Current 170 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] —
On-Resistance RDS(on) typ @ VGS=10V 3.3 mOhm —
On-Resistance RDS(on) max @ VGS=10V 4.1 mOhm —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th)] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissition (PD) at TC=25C 300 W —
Suhu Hubung Kerja -55 C to +175 C —
Paket TO-220AB (3-lead through-hole) PG-TO263-7 (D2PAK-6, surface mount)
Tipe Mounting Through Hole Surface Mount
Lead-Free / RoHS Yes (PBF suffix = lead-free) —
Level MSL N/A (through-hole) —
Avalanche Rated Yes (improved Z-variant ruggedness) —
FET Type — N-Channel
Drain-to-Source Voltage (Vdss) — 80 V
Continuous Drain Current (Id) @ Tc=25°C — 180 A
Power Dissipation (Pd) @ Tc=25°C — 300 W
On-Resistance RDS(on) Max @ VGS=10V — 1.9 mΩ
Gate Threshold Voltage (Vgs(th)) — 3.5 V
Drive Voltage (Rds On Max) — 6 V, 10 V
Total Gate Charge (Qg) @ VGS=10V — 206 nC
Input Capacitance (Ciss) — 14.2 nF
Output Capacitance (Coss) — 3.84 nF
Reverse Transfer Capacitance (Crss) — 3.84 nF
Rentang Suhu Kerja — -55 °C to +175 °C
Status RoHS — Compliant

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon