IRFH7084TRPBF vs IRFH8201TRPBF Comparison
Detailed side-by-side comparison of IRFH7084TRPBF by Infineon and IRFH8201TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFH7084TRPBF | IRFH8201TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | StrongIRFET™ (trench MOSFET) | StrongIRFET (trench MOSFET) |
| Drain-Source Voltage (VDS) | 40 V | 25 V |
| Continuous Drain Current (ID, Tc=25°C, package-limited) | 100 A | — |
| Silicon-Limited Drain Current | 265 A | — |
| Power Dissipation (PD, Tc=25°C) | 156 W | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.25 mΩ | — |
| On-Resistance RDS(on) typ @ VGS=10V | 0.95 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage VGS(th) typ | 1.7 V to 2.7 V | — |
| Input Capacitance (Ciss) max @ 25V | 6560 pF | — |
| Operating Temperature Range | -55°C to +175°C (TJ) | -55C to +150C |
| Package | 8-PQFN 5x6 mm (SuperSO8) | SuperSO8 5x6 (PQFN-8) with exposed pad |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | [DATA_NEEDED: MSL level] |
| RoHS Status | Compliant | Compliant |
| Halogen Free | Compliant | — |
| RthJC max | 0.96 °C/W (per datasheet) | — |
| Continuous Drain Current (ID) at TA=25C | — | 49 A |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | 324 A |
| RDS(on) max at VGS=10V | — | 0.95 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | 1.35 V max |
| Total Gate Charge (Qg) | — | 56 nC at VGS=10V |
| Output Capacitance (Coss) | — | 7.33 nF |
| Reverse Transfer Capacitance (Crss) | — | 850 pF |
| Power Dissipation (TA) | — | 3.6 W |
| Power Dissipation (TC) | — | 156 W |