IRFH7084TRPBF vs IRFH8201TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFH7084TRPBF disebabkan oleh Infineon dan IRFH8201TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFH7084TRPBF | IRFH8201TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Technology | StrongIRFET™ (trench MOSFET) | StrongIRFET (trench MOSFET) |
| Drain-Source Voltage (VDS) | 40 V | 25 V |
| Continuous Drain Current (ID, Tc=25°C, package-limited) | 100 A | — |
| Silicon-Limited Drain Current | 265 A | — |
| Power Dissipation (PD, Tc=25°C) | 156 W | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.25 mΩ | — |
| On-Resistance RDS(on) typ @ VGS=10V | 0.95 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage VGS(th) typ | 1.7 V to 2.7 V | — |
| Input Capacitance (Ciss) max @ 25V | 6560 pF | — |
| Gambaran Suhu Operasi | -55°C to +175°C (TJ) | -55C to +150C |
| Kemasan | 8-PQFN 5x6 mm (SuperSO8) | SuperSO8 5x6 (PQFN-8) with exposed pad |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 1 | [DATA_NEEDED: MSL level] |
| Status RoHS | Compliant | Compliant |
| Boson Bebas | Compliant | — |
| RthJC max | 0.96 °C/W (per datasheet) | — |
| Continuous Drain Current (ID) at TA=25C | — | 49 A |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | 324 A |
| RDS(on) max at VGS=10V | — | 0.95 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | 1.35 V max |
| Total Gate Charge (Qg) | — | 56 nC at VGS=10V |
| Output Capacitance (Coss) | — | 7.33 nF |
| Reverse Transfer Capacitance (Crss) | — | 850 pF |
| Power Dissipation (TA) | — | 3.6 W |
| Power Dissipation (TC) | — | 156 W |