IRFH7084TRPBF vs IRFH8201TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFH7084TRPBF sa pamamagitan ng Infineon at IRFH8201TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRFH7084TRPBF IRFH7084TRPBF - 40V 100A N-Ch StrongIRFET PQFN | Infineon

IRFH7084TRPBF - 40V 100A N-Ch StrongIRFET PQFN | Infineon

IRFH7084TRPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRFH7084TRPBF IRFH8201TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel N-Channel
Technology StrongIRFET™ (trench MOSFET) StrongIRFET (trench MOSFET)
Drain-Source Voltage (VDS) 40 V 25 V
Continuous Drain Current (ID, Tc=25°C, package-limited) 100 A —
Silicon-Limited Drain Current 265 A —
Power Dissipation (PD, Tc=25°C) 156 W —
On-Resistance RDS(on) max @ VGS=10V 1.25 mΩ —
On-Resistance RDS(on) typ @ VGS=10V 0.95 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage VGS(th) typ 1.7 V to 2.7 V —
Input Capacitance (Ciss) max @ 25V 6560 pF —
Hanay ng Temperature na Operasyon -55°C to +175°C (TJ) -55C to +150C
Packhaging 8-PQFN 5x6 mm (SuperSO8) SuperSO8 5x6 (PQFN-8) with exposed pad
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 [DATA_NEEDED: MSL level]
Tindminan RoHS Compliant Compliant
Wala sa Halogen Compliant —
RthJC max 0.96 °C/W (per datasheet) —
Continuous Drain Current (ID) at TA=25C — 49 A
Continuous Drain Current (ID) at TC=25C — 100 A
Pulsed Drain Current (IDM) — 324 A
RDS(on) max at VGS=10V — 0.95 mOhm
Gate Threshold Voltage (VGS(th)) — 1.35 V max
Total Gate Charge (Qg) — 56 nC at VGS=10V
Output Capacitance (Coss) — 7.33 nF
Reverse Transfer Capacitance (Crss) — 850 pF
Power Dissipation (TA) — 3.6 W
Power Dissipation (TC) — 156 W

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