IRFP3710PBF vs IRFB4110PBF Comparison
Detailed side-by-side comparison of IRFP3710PBF by Infineon and IRFB4110PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFP3710PBF | IRFB4110PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.86 | $1.55 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | β |
| Series | HEXFET, Fifth Generation | β |
| FET Type | N-Channel | β |
| Drain-to-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) | 57 A (Tc) | β |
| Power Dissipation (PD) | 200 W (Tc) | β |
| On-Resistance RDS(on) Max | 25 mOhm at VGS = 10 V | β |
| Gate Charge (Qg) Typical | 66.7 nC | β |
| Gate-to-Source Voltage Max | Β±20 V | β |
| Operating Temperature Range | -55C to +175C (Tj) | β |
| Package | TO-247AC (3-pin + tab) | TO-220AB (through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Avalanche Rating | Fully Avalanche Rated | β |
| dv/dt Rating | Dynamic dv/dt Rated | β |
| Lead-Free | Yes | Yes (PBF suffix denotes Pb-free) |
| RoHS Status | Compliant | Compliant (Pb-free suffix) |
| Technology | IR MOSFET (HEXFET) | HEXFET (planar DMOS) |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at TC=25Β°C | β | 120 A (bond-wire limited) |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance RDS(on) max at VGS=10V | β | 4.5 mΞ© |
| On-Resistance RDS(on) typ at VGS=10V | β | 3.7 mΞ© |
| Power Dissipation (PD) at TC=25Β°C | β | 370 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |