IRFP3710PBF vs IRFB4110PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFP3710PBF sa pamamagitan ng Infineon at IRFB4110PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFP3710PBF IRFB4110PBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies (formerly International Rectifier) —
Series HEXFET, Fifth Generation —
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) 57 A (Tc) —
Power Dissipation (PD) 200 W (Tc) —
On-Resistance RDS(on) Max 25 mOhm at VGS = 10 V —
Gate Charge (Qg) Typical 66.7 nC —
Gate-to-Source Voltage Max ±20 V —
Hanay ng Temperature na Operasyon -55C to +175C (Tj) —
Packhaging TO-247AC (3-pin + tab) TO-220AB (through-hole)
Uri ng Pagpapasok Through Hole Through Hole
Avalanche Rating Fully Avalanche Rated —
dv/dt Rating Dynamic dv/dt Rated —
Lead-Free Yes Yes (PBF suffix denotes Pb-free)
Tindminan RoHS Compliant Compliant (Pb-free suffix)
Technology IR MOSFET (HEXFET) HEXFET (planar DMOS)
Uri ng Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC=25°C — 120 A (bond-wire limited)
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
On-Resistance RDS(on) max at VGS=10V — 4.5 mΩ
On-Resistance RDS(on) typ at VGS=10V — 3.7 mΩ
Power Dissipation (PD) at TC=25°C — 370 W
Temperature ng Junction na Operasyon — -55 °C to +175 °C

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