IRFR024NTRPBF vs IRFR5505TRLPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFR024NTRPBF sa pamamagitan ng Infineon at IRFR5505TRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRFR024NTRPBF IRFR024NTRPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon

IRFR024NTRPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon

IRFR024NTRPBF ✓ Nakahanda
Infineon
IRFR5505TRLPBF IRFR5505TRLPBF - P-Ch 55V 18A 110mOhm DPAK MOSFET | Infineon

IRFR5505TRLPBF - P-Ch 55V 18A 110mOhm DPAK MOSFET | Infineon

IRFR5505TRLPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRFR024NTRPBF IRFR5505TRLPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies (formerly International Rectifier) —
Product Series HEXFET Power MOSFET (5th generation) —
Uri ng Transistor N-Channel MOSFET —
Maximum Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) 17 A (at TC = 25 C) -18 A (Tc)
Pulsed Drain Current (IDM) 60 A [DATA_NEEDED: IDM]
On-Resistance (RDS(on)) 75 mOhm max (at VGS = 10 V) —
Gate-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Typical Gate Charge (Qg) 13.3 nC —
Total Power Dissipation (PD) 45 W (at TC = 25 C) —
Temperature ng Junction na Operasyon -55 C to +175 C —
Packhaging TO-252-3 (DPAK, SC-63), surface mount TO-252AA (DPAK), surface mount
Uri ng Pagpapasok Surface Mount Surface Mount
Packaging Tape and Reel (TR) —
RoHS Compliance Compliant (Pb-free / PbF terminations) —
Level ng MSL 1 (per JEDEC J-STD-020) 1
Polarity — P-Channel
MOSFET Operating Mode — Enhancement
VDS (Drain-Source Voltage) — -55 V
VGS (Gate-Source Voltage) — [DATA_NEEDED: VGS max rating]
On-Resistance RDS(on) max — 110 mOhm (VGS = -10 V)
Total Gate Charge (Qg) — 21.3 nC
Power Dissipation (PD) — 57 W (Tc = 25 °C)
Hanay ng Temperature na Operasyon — -55 °C to +175 °C
Thermal Resistance Junction-to-Case (RθJC) — [DATA_NEEDED: RθJC]
Technology — IR MOSFET™ (HEXFET® generation 5)
Lead-Free / RoHS — Yes (PBF suffix)

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