IRFR1018ETRPBF vs IRFR2405TRPBF 比較

詳細並排比較 IRFR1018ETRPBF 由 Infineon 與 IRFR2405TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFR1018ETRPBF IRFR1018ETRPBF - 60V 79A 8.4mΩ N-Channel MOSFET | Infineon

IRFR1018ETRPBF - 60V 79A 8.4mΩ N-Channel MOSFET | Infineon

IRFR1018ETRPBF ✓ 啟用中
Infineon
IRFR2405TRPBF IRFR2405TRPBF - 55V 56A N-Channel HEXFET MOSFET | Infineon

IRFR2405TRPBF - 55V 56A N-Channel HEXFET MOSFET | Infineon

IRFR2405TRPBF ✓ 啟用中

規格比較

參數 IRFR1018ETRPBF IRFR2405TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel N-Channel
Drain-to-Source Voltage (Vdss) 60 V —
Continuous Drain Current (Id) 79 A (Tc) —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
Rds(on) Max @ Vgs=10V 8.4 mΩ —
Rds(on) Max @ Vgs=4.5V [DATA_NEEDED: Rds(on) at 4.5V] —
Gate Threshold Voltage (Vgs(th)) 2.0 V to 4.0 V —
Total Gate Charge (Qg) 46 nC 70 nC
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Reverse Transfer Capacitance (Crss) [DATA_NEEDED: Crss] —
Maximum Power Dissipation (Pd) 110 W (Tc) —
工作溫度範圍 -55 °C to +175 °C —
封裝 TO-252AA (D-Pak) TO-252AA (DPAK)
安裝類型 Surface Mount Surface Mount
Technology HEXFET HEXFET (IR MOSFET)
RoHS 狀態 Compliant Compliant (Lead-Free PBF suffix)
Lead-Free Yes —
MSL 等級 1 1
Avalanche Rated Yes Yes (100% avalanche tested)
Manufacturer — Infineon Technologies
Part Status — Active
Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at Tc=25C — 56 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
On-Resistance RDS(on) max at VGS=10V — 16 mOhm
On-Resistance RDS(on) max at VGS=5V — [DATA_NEEDED: RDS(on) at 5V]
Power Dissipation (PD) at Tc=25C — 110 W
工作接面溫度 — -55C to +175C
腳位數 — 3 (Gate, Drain, Source) + Tab
無鹵素 — [DATA_NEEDED: halogen-free status]

資料表與資源

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