IRFR5305TRLPBF vs IRFR120NTRLPBF Comparison

Detailed side-by-side comparison of IRFR5305TRLPBF by Infineon and IRFR120NTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFR5305TRLPBF IRFR120NTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.38 $0.62
Polarity / Channel Type P-Channel β€”
Drain-Source Voltage (VDS) -55 V 100 V
Continuous Drain Current (ID) at Tc=25C -31 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max Β±20 V [DATA_NEEDED: VGS max rating]
RDS(on) max at VGS=-10V 65 mΞ© β€”
RDS(on) max at VGS=-5V [DATA_NEEDED: RDS(on) at VGS=-5V] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range] [DATA_NEEDED: VGS(th) typical]
Power Dissipation (PD) at Tc=25C 110 W β€”
Operating Junction Temperature -55C to +175C β€”
Package TO-252AA (DPAK), surface mount PG-TO252-3 (DPAK)
Mounting Type Surface Mount Surface Mount
Technology HEXFET fifth-generation planar MOSFET IR MOSFET (HEXFET)
Avalanche Rated Yes (fully avalanche rated) β€”
Lead-Free / RoHS Yes (Pb-free, suffix "PBF") β€”
Tape & Reel Orientation Left orientation (TRLPBF = Tape & Reel, Left) β€”
FET Type β€” N-Channel
Continuous Drain Current (ID) at TC=25C β€” 9.4 A
On-Resistance RDS(on) max at VGS=10V β€” 210 mΞ©
Total Gate Charge (Qg) β€” 16.7 nC
Power Dissipation (PD) at TC=25C β€” 48 W
Operating Junction Temperature Range β€” -55C to +175C
Avalanche Energy Rated β€” Yes (fully avalanche rated)
RoHS Status β€” Compliant
Lead-Free Finish β€” Yes (Pb-free)

Datasheets & Resources

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