IRFR5305TRLPBF vs IRFR120NTRLPBF Perbandingan
Perbandingan bersamaan detil IRFR5305TRLPBF dari Infineon dan IRFR120NTRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFR5305TRLPBF | IRFR120NTRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity / Channel Type | P-Channel | — |
| Drain-Source Voltage (VDS) | -55 V | 100 V |
| Continuous Drain Current (ID) at Tc=25C | -31 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | ±20 V | [DATA_NEEDED: VGS max rating] |
| RDS(on) max at VGS=-10V | 65 mΩ | — |
| RDS(on) max at VGS=-5V | [DATA_NEEDED: RDS(on) at VGS=-5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) range] | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD) at Tc=25C | 110 W | — |
| Suhu Hubung Kerja | -55C to +175C | — |
| Paket | TO-252AA (DPAK), surface mount | PG-TO252-3 (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | HEXFET fifth-generation planar MOSFET | IR MOSFET (HEXFET) |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| Lead-Free / RoHS | Yes (Pb-free, suffix "PBF") | — |
| Tape & Reel Orientation | Left orientation (TRLPBF = Tape & Reel, Left) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC=25C | — | 9.4 A |
| On-Resistance RDS(on) max at VGS=10V | — | 210 mΩ |
| Total Gate Charge (Qg) | — | 16.7 nC |
| Power Dissipation (PD) at TC=25C | — | 48 W |
| Rentang Suhu Hubung Kerja | — | -55C to +175C |
| Avalanche Energy Rated | — | Yes (fully avalanche rated) |
| Status RoHS | — | Compliant |
| Lead-Free Finish | — | Yes (Pb-free) |