IRFR5305TRLPBF vs IRFR120NTRLPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFR5305TRLPBF sa pamamagitan ng Infineon at IRFR120NTRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFR5305TRLPBF IRFR120NTRLPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity / Channel Type P-Channel —
Drain-Source Voltage (VDS) -55 V 100 V
Continuous Drain Current (ID) at Tc=25C -31 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max ±20 V [DATA_NEEDED: VGS max rating]
RDS(on) max at VGS=-10V 65 mΩ —
RDS(on) max at VGS=-5V [DATA_NEEDED: RDS(on) at VGS=-5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range] [DATA_NEEDED: VGS(th) typical]
Power Dissipation (PD) at Tc=25C 110 W —
Temperature ng Junction na Operasyon -55C to +175C —
Packhaging TO-252AA (DPAK), surface mount PG-TO252-3 (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Technology HEXFET fifth-generation planar MOSFET IR MOSFET (HEXFET)
Avalanche Rated Yes (fully avalanche rated) —
Lead-Free / RoHS Yes (Pb-free, suffix "PBF") —
Tape & Reel Orientation Left orientation (TRLPBF = Tape & Reel, Left) —
FET Type — N-Channel
Continuous Drain Current (ID) at TC=25C — 9.4 A
On-Resistance RDS(on) max at VGS=10V — 210 mΩ
Total Gate Charge (Qg) — 16.7 nC
Power Dissipation (PD) at TC=25C — 48 W
Hanay ng Temperature ng Junction na Operasyon — -55C to +175C
Avalanche Energy Rated — Yes (fully avalanche rated)
Tindminan RoHS — Compliant
Lead-Free Finish — Yes (Pb-free)

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita