IRFR5410TRPBF vs IRLTS2242TRPBF Perbandingan
Perbandingan bersamaan detil IRFR5410TRPBF dari Infineon dan IRLTS2242TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFR5410TRPBF | IRLTS2242TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -100 V | -20 V |
| Continuous Drain Current (ID) at TC = 25 °C | -13 A | — |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V | 205 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Total Gate Charge (Qg) typ | 70 nC | — |
| Paket | TO-252AA (DPAK), surface mount | TSOP-6 (Micro 6) |
| Power Dissition (PD) at TC = 25 °C | 66 W | — |
| Rentang Suhu Kerja | -55 °C to +150 °C (TJ) | -55C to +150C (junction) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | HEXFET (advanced process, Gen 5) | IR MOSFET (HEXFET) |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| Lead-Free / RoHS Status | Lead-free, RoHS compliant (PBF suffix) | — |
| Level MSL | [DATA_NEEDED: MSL rating] | MSL1 (per JEDEC J-STD-020) |
| RDS(on) Test Conditions | VGS = -10 V, ID = -7.0 A | — |
| Continuous Drain Current (ID) at TA=25C | — | -6.9 A |
| Power Dissipation (PD) at TA=25C | — | 2.0 W |
| On-Resistance RDS(on) max at VGS=-10V | — | 32 mOhm |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS absolute max] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Gate Drive Voltage (logic level) | — | 4.5 V (fully enhanced), 2.5 V capable |
| Package Thermal Resistance (RthJA) | — | [DATA_NEEDED: RthJA on 1 inch FR-4 PCB] |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Bebas Halogen | — | Yes |