IRFR7540TRPBF vs IRFH5015TRPBF Perbandingan
Perbandingan bersamaan detil IRFR7540TRPBF dari Infineon dan IRFH5015TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFR7540TRPBF | IRFH5015TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Technology | StrongIRFET™ (HEXFET) | IR MOSFET (HEXFET) |
| Drain-Source Voltage (VDS) | 60 V | 150 V |
| Continuous Drain Current (ID) at TC=25°C | 90 A | — |
| Pulsed Drain Current (IDM) | 110 A (limited by TJmax) | — |
| Power Dissipation (PD) at TC=25°C | 140 W | — |
| RDS(on) max at VGS=10V | 4.8 mΩ | — |
| RDS(on) typical at 100µA VGS | 3.7 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 3.7 V typical | — |
| Rentang Suhu Kerja | -55°C to +175°C (TJ max) | — |
| Paket | TO-252AA (DPAK) Surface Mount | 8-PQFN (5x6) SuperSO8 |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | 1 | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Continuous Drain Current (ID) at TA=25C | — | 10 A |
| Continuous Drain Current (ID) at TC=25C | — | 56 A |
| On-Resistance (RDS(on)) max | — | 31 mOhm |
| Total Gate Charge (Qg) | — | 33 nC |
| Power Dissipation (TA=25C) | — | 3.6 W |
| Power Dissipation (TC=25C) | — | 156 W |
| Gate Drive Voltage (VGS recommended) | — | 10 V |
| Configuration | — | Single with built-in body diode |
| Suhu Kerja | — | -55C to +150C (TJ max) |