IRFS3107TRLPBF vs IRFS3006TRLPBF Comparison
Detailed side-by-side comparison of IRFS3107TRLPBF by Infineon and IRFS3006TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFS3107TRLPBF | IRFS3006TRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.75 | $1.40 |
| FET Type | N-Channel, Enhancement Mode | N-Channel |
| Drain-Source Voltage (VDS) | 75 V | — |
| Continuous Drain Current (ID) | 195 A at Tc | — |
| Continuous Drain Current (ID max) | 230 A | — |
| Power Dissipation (PD) | 370 W at Tc | — |
| RDS(on) Max | 3 mOhm | — |
| Total Gate Charge (Qg) | 160 nC | 200 nC |
| Avalanche Energy (EAS) | 300 mJ | — |
| Drive Voltage (Max RDS(on)) | 10 V | — |
| Technology | IR MOSFET (HEXFET) | IR HEXFET (Planar DMOS) |
| Configuration | Single with built-in body diode | — |
| Package | D2PAK (TO-263AB), 3-pin | D2PAK (TO-263AB), surface mount |
| Mounting Type | Surface Mount (Gull Wing) | Surface Mount |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | — |
| RoHS Status | Compliant (PBF / lead-free) | — |
| Drain-Source Voltage (Vds) | — | 60 V |
| Continuous Drain Current (Id) at Tc=25C | — | 195 A |
| Pulsed Drain Current (Idm) | — | 270 A |
| On-Resistance Rds(on) max at Vgs=10V | — | 2.5 mOhm |
| Gate-Source Threshold Vgs(th) | — | 2.0 V to 4.0 V |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd value] |
| Power Dissipation (Pd) at Tc=25C | — | 375 W |
| Operating Junction Temperature | — | -55 C to +175 C |
| Thermal Resistance Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC value] |
| RoHS Compliance | — | Lead-Free (Pb-Free), RoHS Compliant |
| MSL Level | — | 1 |
| Avalanche Energy Rating | — | Avalanche rated (per Infineon datasheet) |