IRFS3107TRLPBF vs IRFS3006TRLPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFS3107TRLPBF disebabkan oleh Infineon dan IRFS3006TRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFS3107TRLPBF | IRFS3006TRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel, Enhancement Mode | N-Channel |
| Drain-Source Voltage (VDS) | 75 V | — |
| Continuous Drain Current (ID) | 195 A at Tc | — |
| Continuous Drain Current (ID max) | 230 A | — |
| Power Dissipation (PD) | 370 W at Tc | — |
| RDS(on) Max | 3 mOhm | — |
| Total Gate Charge (Qg) | 160 nC | 200 nC |
| Avalanche Energy (EAS) | 300 mJ | — |
| Drive Voltage (Max RDS(on)) | 10 V | — |
| Technology | IR MOSFET (HEXFET) | IR HEXFET (Planar DMOS) |
| Configuration | Single with built-in body diode | — |
| Kemasan | D2PAK (TO-263AB), 3-pin | D2PAK (TO-263AB), surface mount |
| Jenis Pemasangan | Surface Mount (Gull Wing) | Surface Mount |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | — |
| Status RoHS | Compliant (PBF / lead-free) | — |
| Drain-Source Voltage (Vds) | — | 60 V |
| Continuous Drain Current (Id) at Tc=25C | — | 195 A |
| Pulsed Drain Current (Idm) | — | 270 A |
| On-Resistance Rds(on) max at Vgs=10V | — | 2.5 mOhm |
| Gate-Source Threshold Vgs(th) | — | 2.0 V to 4.0 V |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd value] |
| Power Dissipation (Pd) at Tc=25C | — | 375 W |
| Suhu Hubungan Operasi | — | -55 C to +175 C |
| Thermal Resistance Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC value] |
| RoHS Compliance | — | Lead-Free (Pb-Free), RoHS Compliant |
| Aras MSL | — | 1 |
| Avalanche Energy Rating | — | Avalanche rated (per Infineon datasheet) |