IRFS3107TRLPBF vs IRFS3006TRLPBF Comparación
Comparación detallada lado a lado de IRFS3107TRLPBF por Infineon y IRFS3006TRLPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFS3107TRLPBF | IRFS3006TRLPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,75 | $1,40 |
| FET Type | N-Channel, Enhancement Mode | N-Channel |
| Drain-Source Voltage (VDS) | 75 V | — |
| Continuous Drain Current (ID) | 195 A at Tc | — |
| Continuous Drain Current (ID max) | 230 A | — |
| Power Dissipation (PD) | 370 W at Tc | — |
| RDS(on) Max | 3 mOhm | — |
| Total Gate Charge (Qg) | 160 nC | 200 nC |
| Avalanche Energy (EAS) | 300 mJ | — |
| Drive Voltage (Max RDS(on)) | 10 V | — |
| Technology | IR MOSFET (HEXFET) | IR HEXFET (Planar DMOS) |
| Configuration | Single with built-in body diode | — |
| Encapsulado | D2PAK (TO-263AB), 3-pin | D2PAK (TO-263AB), surface mount |
| Tipo de montaje | Surface Mount (Gull Wing) | Surface Mount |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | — |
| Estado RoHS | Compliant (PBF / lead-free) | — |
| Drain-Source Voltage (Vds) | — | 60 V |
| Continuous Drain Current (Id) at Tc=25C | — | 195 A |
| Pulsed Drain Current (Idm) | — | 270 A |
| On-Resistance Rds(on) max at Vgs=10V | — | 2.5 mOhm |
| Gate-Source Threshold Vgs(th) | — | 2.0 V to 4.0 V |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd value] |
| Power Dissipation (Pd) at Tc=25C | — | 375 W |
| Temperatura de unión de funcionamiento | — | -55 C to +175 C |
| Thermal Resistance Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC value] |
| RoHS Compliance | — | Lead-Free (Pb-Free), RoHS Compliant |
| Nivel MSL | — | 1 |
| Avalanche Energy Rating | — | Avalanche rated (per Infineon datasheet) |