IRFS3107TRLPBF vs IRFS3006TRLPBF Vergleich
Detaillierter Direktvergleich von IRFS3107TRLPBF von Infineon und IRFS3006TRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFS3107TRLPBF | IRFS3006TRLPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,75 | $1,40 |
| FET Type | N-Channel, Enhancement Mode | N-Channel |
| Drain-Source Voltage (VDS) | 75 V | — |
| Continuous Drain Current (ID) | 195 A at Tc | — |
| Continuous Drain Current (ID max) | 230 A | — |
| Power Dissipation (PD) | 370 W at Tc | — |
| RDS(on) Max | 3 mOhm | — |
| Total Gate Charge (Qg) | 160 nC | 200 nC |
| Avalanche Energy (EAS) | 300 mJ | — |
| Drive Voltage (Max RDS(on)) | 10 V | — |
| Technology | IR MOSFET (HEXFET) | IR HEXFET (Planar DMOS) |
| Configuration | Single with built-in body diode | — |
| Gehäuse | D2PAK (TO-263AB), 3-pin | D2PAK (TO-263AB), surface mount |
| Montageart | Surface Mount (Gull Wing) | Surface Mount |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | — |
| RoHS-Status | Compliant (PBF / lead-free) | — |
| Drain-Source Voltage (Vds) | — | 60 V |
| Continuous Drain Current (Id) at Tc=25C | — | 195 A |
| Pulsed Drain Current (Idm) | — | 270 A |
| On-Resistance Rds(on) max at Vgs=10V | — | 2.5 mOhm |
| Gate-Source Threshold Vgs(th) | — | 2.0 V to 4.0 V |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd value] |
| Power Dissipation (Pd) at Tc=25C | — | 375 W |
| Betriebs-Sperrschichttemperatur | — | -55 C to +175 C |
| Thermal Resistance Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC value] |
| RoHS Compliance | — | Lead-Free (Pb-Free), RoHS Compliant |
| MSL-Level | — | 1 |
| Avalanche Energy Rating | — | Avalanche rated (per Infineon datasheet) |