IRFU5305PBF vs IRFR5305TRLPBF Comparison

Detailed side-by-side comparison of IRFU5305PBF by Infineon and IRFR5305TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFU5305PBF IRFR5305TRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.68 $0.38
Polarity P-Channel
Drain-Source Voltage (VDS) -55 V -55 V
Continuous Drain Current (ID) at Tc -31 A
Pulsed Drain Current (IDM) -110 A (pulsed) [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=-10V 65 mΩ
Gate-Source Voltage (VGS) max ±20 V ±20 V
Total Gate Charge (Qg) 42 nC (typical)
Power Dissipation (PD) at Tc=25°C 110 W
Operating Junction Temperature -55 °C to +175 °C -55C to +175C
Thermal Resistance Junction-to-Case (RθJC) 1.36 °C/W
Thermal Resistance Junction-to-Ambient (RθJA) 62 °C/W
Package IPAK (TO-251AA) Through-Hole, 3 pins TO-252AA (DPAK), surface mount
Mounting Type Through Hole Surface Mount
Avalanche Rated Yes (EAS rated) Yes (fully avalanche rated)
RoHS Compliance Compliant
Polarity / Channel Type P-Channel
Continuous Drain Current (ID) at Tc=25C -31 A
RDS(on) max at VGS=-10V 65 mΩ
RDS(on) max at VGS=-5V [DATA_NEEDED: RDS(on) at VGS=-5V]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range]
Power Dissipation (PD) at Tc=25C 110 W
Technology HEXFET fifth-generation planar MOSFET
Lead-Free / RoHS Yes (Pb-free, suffix "PBF")
Tape & Reel Orientation Left orientation (TRLPBF = Tape & Reel, Left)

Datasheets & Resources

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