IRFU5305PBF - -55V P-Ch HEXFET MOSFET, 31A, IPAK | Infineon
MPN: IRFU5305PBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.62 | $1.62 |
| 10 | $1.42 | $14.20 |
| 100 | $1.18 | $118.00 |
| 500 | $0.96 | $480.00 |
| 1,000 | $0.81 | $810.00 |
| 3,000 | $0.68 | $2,040.00 |
Drop-in alternatives for IRFU5305PBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRFR5305PBF
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IRFU5305PBF
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View Datasheet →IRFR5305TRLPBF
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$0.38 / Unit
View Datasheet →FQP27P06
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IPP60P03P4L-04
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IRFU5305PBF Maximum Ratings & Electrical Characteristics
| Polarity | P-Channel |
| Drain-Source Voltage (VDS) | -55 V |
| Continuous Drain Current (ID) at Tc | -31 A |
| Pulsed Drain Current (IDM) | -110 A (pulsed) |
| On-Resistance RDS(on) max @ VGS=-10V | 65 mΩ |
| Gate-Source Voltage (VGS) max | ±20 V |
| Total Gate Charge (Qg) | 42 nC (typical) |
| Power Dissipation (PD) at Tc=25°C | 110 W |
| Operating Junction Temperature | -55 °C to +175 °C |
| Thermal Resistance Junction-to-Case (RθJC) | 1.36 °C/W |
| Thermal Resistance Junction-to-Ambient (RθJA) | 62 °C/W |
| Package | IPAK (TO-251AA) Through-Hole, 3 pins |
| Mounting Type | Through Hole |
| Avalanche Rated | Yes (EAS rated) |
| RoHS Compliance | Compliant |
IRFU5305PBF Pin Configuration
| Pin 1 | Gate — Gate control input; drive -10 V to -20 V relative to Source for full enhancement |
| Pin 2 | Drain — Power drain; internally connected to the metal tab/back of the package |
| Pin 3 | Source — Power source; reference terminal for VGS and thermal tab |
IRFU5305PBF Safe Operating Area (DC, Tc=25°C)
Typical Applications
IRFU5305PBF is suitable for 6 applications: High-Side Load Switch in 24V Industrial Bus, Reverse-Battery Protection for Automotive ECUs, DC Motor Drive H-Bridge (Low-Side Switch), Synchronous-Rectifier Low-Side Switch in Buck Converter, Power OR-ing in Redundant Telecom Supplies, Battery Disconnect Switch in UPS / Solar Systems.
High-Side Load Switch in 24V Industrial Bus
The IRFU5305PBF's P-channel polarity makes it ideal for high-side switching on 24 V industrial bus rails where source-referenced gate drive simplifies the controller interface. With VDS = -55 V it tolerates the full 24 V nominal plus 40 % transient overshoot (33.6 V) with margin, while the -31 A continuous rating handles multi-ampere solenoid and motor loads directly. The IPAK (TO-251AA) tab accepts a standard TO-220 heatsink clip, giving a compact thermal solution. Designers place the part between the 24 V rail and the load, with a 10 kΩ pull-up from gate to source to guarantee off-state during controller power-up. Compared to an N-channel high-side switch, no charge pump is required, reducing BOM cost by ~$0.30 and saving PCB area. The 65 mΩ RDS(on) keeps conduction loss at -10 A to about 6.5 W, which is manageable with 1 sq-in of copper.
Recommended
Reverse-Battery Protection for Automotive ECUs
The IRFU5305PBF in source-follower configuration provides robust reverse-battery protection for 12 V automotive ECUs. With VDS = -55 V the MOSFET easily blocks the -12 V reverse polarity event, and the -31 A continuous rating covers the full load current of typical body-control modules. The 65 mΩ RDS(on) keeps voltage drop across the protection FET under 200 mV at -10 A, preserving regulation headroom for downstream 5 V and 3.3 V regulators. Designers gate the FET on with a pull-up to the source and a Zener clamp to protect VGS during load-dump transients up to 40 V. The IPAK (TO-251AA) package dissipates 110 W at Tc = 25 °C and accepts automotive under-hood thermal environments up to 105 °C ambient when properly heatsinked.
Recommended
DC Motor Drive H-Bridge (Low-Side Switch)
In a brushed DC motor H-bridge, the IRFU5305PBF serves as one of four low-side switches, paired with N-channel parts such as the BSC0902NS on the high-side. Its -55 V VDS easily withstands the inductive kick from a 24 V motor (theoretically -48 V), and the -31 A continuous rating covers most fractional-horsepower motor stalls. The 42 nC total gate charge keeps PWM switching losses low at 25 kHz, enabling efficient torque control without thermal runaway. The HEXFET die's avalanche rating absorbs the stored inductive energy at switch-off, eliminating the need for external freewheeling diodes in low-voltage (<30 V) applications. Use the IPAK tab as a heatsink attachment point, sized for steady-state ID² × RDS(on) losses.
Recommended
Synchronous-Rectifier Low-Side Switch in Buck Converter
The IRFU5305PBF works as the synchronous-rectifier low-side switch in a 24 V-to-12 V or 24 V-to-5 V buck converter, replacing a Schottky diode to recover forward-conduction losses. With RDS(on) = 65 mΩ and ID = -20 A in continuous conduction, conduction loss is ~26 W at full load — 70 % lower than a 40 V Schottky diode at the same current. The HEXFET body diode serves as the dead-time conduction path, rated for the same -55 V reverse voltage. Designers synchronize the FET gate to the controller's low-side driver output, and add a small RC snubber (10 Ω + 1 nF) across drain-source to limit ringing from the package inductance. Below 5 A load, the controller can skip pulses to maintain efficiency.
Recommended
Power OR-ing in Redundant Telecom Supplies
In -48 V telecom redundant supply OR-ing, the IRFU5305PBF provides low-loss combining of two rectifier outputs. Its -55 V VDS handles the full -48 V bus plus 10 % tolerance with margin, and the 65 mΩ RDS(on) keeps OR-ing loss under 5 W at -8 A load — far better than the 1.2 V drop of a Schottky diode. Designers add a small gate-source pull-up (100 kΩ) and a fast comparator that turns the FET off within 10 µs of detecting reverse current, preventing back-feed into a failed rectifier. The avalanche rating handles the bus transient during hot-swap insertion. The IPAK package's TO-220 heatsink compatibility simplifies thermal management in densely packed telecom shelves.
Recommended
Battery Disconnect Switch in UPS / Solar Systems
The IRFU5305PBF acts as a low-side battery disconnect switch in 24 V / 48 V UPS and solar battery banks, isolating the battery pack during storage, transport, or fault conditions. Its P-channel polarity (source tied to battery negative) lets the controller ground the gate to enable the FET, eliminating the need for an isolated gate supply. With -31 A continuous rating, it handles typical 1 kW inverter input currents at 24 V nominal; the 65 mΩ RDS(on) limits full-load drop to 1.6 V. The HEXFET die is fully avalanche-rated, absorbing the inductive energy of the battery cable at disconnect. The IPAK tab mounts directly to a chassis ground plane or aluminum enclosure for heatsinking.
Recommended
Recommended Products Summary
Engineering reference data for IRFU5305PBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFR5305PBF | IRF5305PBF | IRF5305STRLPBF | IRFR5305TRLPBF | FQP27P06 | STP80PF55 | IPP60P03P4L-04 |
|---|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | STMicroelectronics | Infineon Technologies |
| Package | IPAK (TO-251AA) Through-Hole | DPAK (TO-252) SMD | TO-220 Through-Hole | D2PAK (TO-263) SMD | DPAK (TO-252) SMD | TO-220 Through-Hole | TO-220 Through-Hole | TO-220 Through-Hole |
| VDS max | -55 V | -55 V | -55 V | -55 V | -55 V | -60 V | -55 V | -30 V |
| Continuous ID at Tc=25°C | -31 A | -31 A | -31 A | -31 A | -31 A | -27 A | -80 A | -60 A |
| RDS(on) max @ VGS=-10V | 65 mΩ | 65 mΩ | 65 mΩ | 65 mΩ | 65 mΩ | 70 mΩ | 30 mΩ | 6 mΩ |
| Total Gate Charge Qg | 42 nC | 42 nC | 42 nC | 42 nC | 42 nC | 110 nC | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation at Tc=25°C | 110 W | 110 W | 130 W | 130 W | 110 W | 120 W | 250 W | 150 W |
| Unit Price (qty 1, USD) | $1.62 | $1.55 | $1.95 | $2.10 | $1.58 | $0.95 | $1.85 | $2.40 |
Key Differentiators
- P-channel polarity enables source-referenced gate drive (vs BSC0902NSATMA1 (N-channel))
- Low 42 nC total gate charge for fast switching (vs FQP27P06 (110 nC))
- Compact IPAK (TO-251AA) footprint with TO-220 heatsink compatibility (vs IRFR5305PBF (DPAK SMD))
Design Notes
Estimated: at -10 A continuous drain current and RDS(on) = 65 mΩ at 25 °C die temperature, conduction loss is P = I² × RDS = 100 × 0.065 = 6.5 W. With RθJC = 1.36 °C/W (junction-to-case), the junction rises 6.5 × 1.36 ≈ 8.8 °C above the case. If the case is held at 80 °C by a heatsink sized for 1 °C/W (junction-to-ambient), the junction reaches 88.8 °C — well below the 175 °C maximum. For full -31 A rating, conduction loss reaches 62.5 W, requiring a substantial heatsink or down-rating to ~22 A continuous at Tc=100 °C. Always derate to 50-60 % of the rated continuous current for long-term reliability.
For switching applications above 50 kHz, minimize the source-lead inductance by keeping the gate-drive return path (source pin) short and wide. The IPAK (TO-251AA) package has ~5 nH of source inductance, which combined with the gate driver's dV/dt can cause spurious gate-source overvoltage and FET re-turn-on. Add a 10 Ω gate-series resistor and a 100 kΩ gate-source pull-down resistor to damp oscillations. Keep the drain tab trace short to limit switching-node ringing, especially in half-bridge topologies.
Do not exceed the maximum gate-source voltage of ±20 V (data taken from VGS abs max rating for the HEXFET family). Use a Zener clamp (15 V) gate-to-source if the gate driver can overshoot during switch-off transients. Also verify that the gate threshold voltage VGS(th) (typically -2 V to -4 V for this HEXFET generation) is compatible with the 3.3 V or 5 V logic-level controller output — for 3.3 V CMOS driving, add a gate-driver or Darlington buffer to ensure full enhancement at VGS = -10 V.
Compliance Information
RoHS and lead-free confirmed by the 'PBF' suffix in the MPN and Infineon product page; not AEC-Q100 qualified (use automotive-grade parts for vehicle applications); conflict-minerals declaration available on Infineon material compliance portal.
