IRFU5305PBF vs IRFR5305TRLPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFU5305PBF sa pamamagitan ng Infineon at IRFR5305TRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFU5305PBF | IRFR5305TRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -55 V | -55 V |
| Continuous Drain Current (ID) at Tc | -31 A | — |
| Pulsed Drain Current (IDM) | -110 A (pulsed) | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=-10V | 65 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | ±20 V |
| Total Gate Charge (Qg) | 42 nC (typical) | — |
| Power Dissipation (PD) at Tc=25°C | 110 W | — |
| Temperature ng Junction na Operasyon | -55 °C to +175 °C | -55C to +175C |
| Thermal Resistance Junction-to-Case (RθJC) | 1.36 °C/W | — |
| Thermal Resistance Junction-to-Ambient (RθJA) | 62 °C/W | — |
| Packhaging | IPAK (TO-251AA) Through-Hole, 3 pins | TO-252AA (DPAK), surface mount |
| Uri ng Pagpapasok | Through Hole | Surface Mount |
| Avalanche Rated | Yes (EAS rated) | Yes (fully avalanche rated) |
| RoHS Compliance | Compliant | — |
| Polarity / Channel Type | — | P-Channel |
| Continuous Drain Current (ID) at Tc=25C | — | -31 A |
| RDS(on) max at VGS=-10V | — | 65 mΩ |
| RDS(on) max at VGS=-5V | — | [DATA_NEEDED: RDS(on) at VGS=-5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) range] |
| Power Dissipation (PD) at Tc=25C | — | 110 W |
| Technology | — | HEXFET fifth-generation planar MOSFET |
| Lead-Free / RoHS | — | Yes (Pb-free, suffix "PBF") |
| Tape & Reel Orientation | — | Left orientation (TRLPBF = Tape & Reel, Left) |