IRFU5305PBF vs IRFR5305TRLPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFU5305PBF disebabkan oleh Infineon dan IRFR5305TRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFU5305PBF | IRFR5305TRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -55 V | -55 V |
| Continuous Drain Current (ID) at Tc | -31 A | — |
| Pulsed Drain Current (IDM) | -110 A (pulsed) | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=-10V | 65 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | ±20 V |
| Total Gate Charge (Qg) | 42 nC (typical) | — |
| Power Dissipation (PD) at Tc=25°C | 110 W | — |
| Suhu Hubungan Operasi | -55 °C to +175 °C | -55C to +175C |
| Thermal Resistance Junction-to-Case (RθJC) | 1.36 °C/W | — |
| Thermal Resistance Junction-to-Ambient (RθJA) | 62 °C/W | — |
| Kemasan | IPAK (TO-251AA) Through-Hole, 3 pins | TO-252AA (DPAK), surface mount |
| Jenis Pemasangan | Through Hole | Surface Mount |
| Avalanche Rated | Yes (EAS rated) | Yes (fully avalanche rated) |
| RoHS Compliance | Compliant | — |
| Polarity / Channel Type | — | P-Channel |
| Continuous Drain Current (ID) at Tc=25C | — | -31 A |
| RDS(on) max at VGS=-10V | — | 65 mΩ |
| RDS(on) max at VGS=-5V | — | [DATA_NEEDED: RDS(on) at VGS=-5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) range] |
| Power Dissipation (PD) at Tc=25C | — | 110 W |
| Technology | — | HEXFET fifth-generation planar MOSFET |
| Lead-Free / RoHS | — | Yes (Pb-free, suffix "PBF") |
| Tape & Reel Orientation | — | Left orientation (TRLPBF = Tape & Reel, Left) |